SI5504DC

Complementary 30 V (D-S) MOSFET Si5504DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.085 at VGS = 10 V 0.143 at VGS = 4.5 V P-Channel - 30 0.165 at VGS = - 10 V 0.290 at VGS = - 4.5 V ID (A) ± 3.9 ± 3.0 ± 2.8 ± 2.1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EA XX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free) Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 30 - 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 3.9 ± 2.8 ± 2.9 ± 2.1 ± 2.8 ± 2.0 ± 2.1 ± 1.5 A Pulsed Drain Current IDM ± 10 Continuous Source Current (Diode Conduction)a IS 1.8 0.9 - 1.8 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.1 1.1 1.1 0.6 2.1 1.1 1.1 W 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t≤5s Steady State RthJA 50 90 Maximum Junction-to-Foo...