SI5511DC

www.DataSheet.co.kr Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (Ω) 0.055 at VGS = 4.5 V 0.090 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.256 at VGS = - 2.5 V ID (A) 4a,g 4a,g - 3.6 a FEATURES Qg (Typ) 4.2 nC TrenchFET® Power MOSFETs APPLICATIONS Buck-Boost - DSC - Portable Devices RoHS COMPLIANT P-Channel - 30 - 2.7a 2.85 nC 1206-8 Chip-FET ® 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 Marking Code EE XXX G2 G1 Lot Traceability and Date Code Part # Code S1 Bottom View Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) D2 P-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 30 ± 12 4a, g 4a, g 4a, g 3.9a 15 2.6 1.7b, c 3.1 2.0 2.1b, c 1.33b, c - 55 to 150 260 - 3.6a - 2.8a - 2.3b, c - 1.8b, c - 10 - 2.6 - 1.7b, c 2.6 1.7 1.3b, c 0.84b, c P-Channel - 30 Unit V A Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS N-Channel Parameter Junction-to-Ambientb, f t≤5s Symbol RthJA RthJF Typ 50 30 Max 60 40 P-Channel Typ 77 33 Max 95 40 Unit Maximum °C/W Maximum J...