MOSFET
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Si5513CDC
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 20...
Description
www.DataSheet.co.kr
Si5513CDC
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 20 RDS(on) (Ω) 0.055 at VGS = 4.5 V 0.085 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.255 at VGS = - 2.5 V ID (A)a Qg (Typ.) 4g 4g - 3.7 - 2.9 2.6 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
P-Channel
- 20
3.6 nC
APPLICATIONS
Load Switch for Portable Devices
D1 S2
1206-8 ChipFET®
1
S1 D1 D1 D2 D2 G1 S2 G2
Marking Code EG XXX G1 Lot Traceability and Date Code S1
G2
Part # Code D2 P-Channel MOSFET Bottom View Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
d, e
Symbol VDS VGS ID IDM IS
N-Channel 20 ± 12 4g 4g 4b, c, g 3.5b, c 10 2.6 1.4b, c 3.1 2.0 1.7b, c 1.1b, c
P-Channel - 20 - 3.7 - 3.0 - 2.4b, c - 1.9b, c -8 - 2.6 - 1.7b, c 3.1 2.0 1.3b, c 0.8b, c
Unit V
A
Pulsed Drain Current Source Drain Current Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
- 55 to 150 260
°C
THERMAL RESISTANCE RATINGS
N-Channel Par...
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