SI5517DU

www.vishay.com Si5517DU Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.9 mm 1 3.0 mm Top View Marking code: EA 1 4 G2 3 S2 2 G1 S1 Bottom View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 4.5 V RDS(on) () at VGS = ± 2.5 V RDS(on) () at VGS = ± 1.8 V Qg typ. (nC) ID (A) a Configuration 20 -20 0.039 0.072 0.045 0.100 0.055 0.131 6 5.5 6 -6 N- and p-pair FEATURES TrenchFET® power MOSFETs Thermally enhanced PowerPAK ChipFET package - Small footprint area - Low on-resistance - Thin 0.8 mm profile Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 S2 Complementary MOSFET for portable devices G2 - Ideal for circuits buck-boost G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK ChipFET Si5517DU-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Source-drain current diode current Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg 20 ±8 6a 6a 7.2 b, c 5.8 b, c 20 6.9 1.9 b,...