SI5905DC

www.DataSheet.co.kr Si5905DC Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.090 @ VGS = --4.5 V --8 0.130 @ VGS = --2.5 V 0.180 @ VGS = --1.8 V ID (A) 4.1 3.4 2.9 S1 S2 1206-8 ChipFETt 1 S1 D1 D1 D2 D2 G1 S2 G2 G1 G2 Marking Code DB XX Lot Traceability and Date Code Part # Code Bottom View D1 P-Channel MOSFET D2 P-Channel MOSFET Ordering Information: Si5905DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs --8 Steady State 8 Unit V 4.1 2.9 10 --1.8 2.1 1.1 --55 to 150 260 3.0 2.2 --0.9 1.1 0.6 W _C A THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not requi...