Document
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Si6423DQ
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0085 @ VGS = - 4.5 V - 12 0.0106 @ VGS = - 2.5 V 0.014 @ VGS = - 1.8 V
D TrenchFETr Power MOSFET ID (A)
- 9.5 - 8.5 - 7.5
APPLICATIONS
D Load Switch
S*
TSSOP-8
D S S G 1 2 3 4 Top View Ordering Information: Si6423DQ Si6423DQ-T1 (with Tape and Reel) D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
- 12 "8 - 9.5
Steady State
Unit
V
- 8.2 - 6.5 - 30 A - 0.95 1.05 0.67 - 55 to 150 W _C
ID IDM IS PD TJ, Tstg
-8
- 1.35 1.5 1.0
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72257 S-31419—Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
60 100 35
Maximum
83 120 45
Unit
_C/W
1
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Si6423DQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 400 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 9.5 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 8.5 A VGS = - 1.8 V, ID = - 7.5 A Forward Transconductancea gfs VSD VDS = - 15 V, ID = - 9.5 A IS = - 1.3 A, VGS = 0 V - 20 0.0068 0.0085 0.0112 45 - 0.58 - 1.1 0.0085 0.0106 0.014 S V W - 0.40 - 0.8 "100 -1 - 10 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.3 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 5 V, ID = - 9.5 A 74 9.0 19 3.6 50 75 270 200 160 75 110 400 300 250 ns W 110 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 5 thru 2 V 24 I D - Drain Current (A) 24 I D - Drain Current (A) 30
Transfer Characteristics
1.5 V
18
18
12
12 TC = 125_C 6 25_C - 55_C 1.0 1.2 1.4 1.6 1.8
6
0 0 1 2 3 4 5
0 0.0
0.2
0.4
0.6
0.8
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 72257 S-31419—Rev. A, 07-Jul-03
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Si6423DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030 r DS(on) - On-Resistance ( W ) 8000
Vishay Siliconix
Capacitance
0.018 VGS = 1.8 V 0.012 VGS = 2.5 V 0.006 VGS = 4.5 V
C - Capacitance (pF)
0.024
6400
Ciss
4800
3200
Coss Crss
1600
0.000 0 6 12 18 24 30
0 0 2 4 6 8 10 12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 9.5 A 4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 9.5 A 1.4
3
r DS(on) - On-Resistance (W ) (Normalized) 30 45 60 75
1.2
2
1.0
1
0.8
0 0 15 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.06
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04 ID = 9.5 A 0.03
1 TJ = 25_C
0.02
0.01
0.1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72257 S-31419—Rev. A, 07-Jul-03
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si6423DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 60
Single Pulse Power, Junction-to-Ambient
0.4 V GS(th) Variance (V) ID = 400 mA 0.2
50
40 Power (W)
30
0.0
20 - 0.2
10
- 0.4 - 50
- 25
0
25
50
75
100
125
150
0 10 -2
10 -1
1 Time (sec)
10
100
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Case
100 Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 10 ms 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc
1
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Dut.