SI6926ADQ

www.DataSheet.co.kr Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 4.5 V 20 0.033 at VGS = 3.0 V 0.035 at VGS = 2.5 V 0.043 at VGS = 1.8 V ID (A) 4.5 4.2 3.9 3.6 FEATURES Halogen-free RoHS COMPLIANT D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6926ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 D2 7 S2 6 S2 5 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 0.83 1.0 0.64 - 55 to 150 4.5 3.6 20 0.69 0.83 0.53 W °C 10 s 20 ±8 4.1 3.3 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72754 S-81056-Rev. B, 12-May-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 90 126 65 Maximum 125 150 80 Unit °C/W www.DataSheet...