SI7106DN

www.DataSheet.co.kr Si7106DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0062 at VGS = 4.5 V 0.0098 at VGS = 2.5 V ID (A) 19.5 15.5 Qg (Typ.) 17.5 nC FEATURES Halogen-free Option Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile PWM Optimized 100 % Rg Tested RoHS COMPLIANT PowerPAK 1212-8 APPLICATIONS Synchronous Rectification 3.30 mm 3.30 mm S 1 2 3 S S D G 4 D 8 7 6 5 D D D G Bottom View S Ordering Information: Si7106DN-T1-E3 (Lead (Pb)-free) Si7106DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) b, c a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS L = 0 1 mH TA = 25 °C TA = 70 °C IAS EAS PD TJ, Tstg 10 s 20 Steady State ± 12 Unit V 19.5 15.6 60 3.2 30 45 3.8 2.0 - 55 to 150 260 12.5 10.0 A 1.3 mJ 1.5 0.8 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Typical 24 65 1.9 Maximum 33 81 2.4 °C/W Unit Notes: a. Surface Mounted on 1" x ...