SI7108DN

www.DataSheet.co.kr Si7108DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 22 19.7 rDS(on) (W) 0.0049 @ VGS = 10 V 0.0061 @ VGS = 4.5 V Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT APPLICATIONS PowerPAK 1212-8 3.30 mm S 1 2 3 S S 3.30 mm D D D D Synchronous Rectification Point-of-Load Converters Protection Devices Hot Swap D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7108DN-T1—E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c L=0 0.1 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "16 22 Steady State Unit V 14 11.2 60 A 1.3 22 24 A mJ 1.5 0.8 –55 to 150 260 W ID IDM IS IAS EAS 17.6 3.2 3.8 PD TJ, Tstg 2.0 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 24 65 1.9 Maximum 33 81 2.4 Unit _C/W Notes a. Surface Mou...