SI7113DN

www.DataSheet.co.kr Si7113DN Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES ID (A) - 13.2e - 12.7e Qg (Typ.) 16.5 nC PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) 0.134 at VGS = - 10 V 0.145 at VGS = - 4.5V Halogen-free Option Available TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile UIS and Rg Tested RoHS COMPLIANT APPLICATIONS PowerPAK 1212-8 Active Clamp in Intermediate DC/DC Power Supplies 3.30 mm S 1 2 3 S S 3.30 mm S G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7113DN-T1-E3 (Lead (Pb)-free) Si7113DN-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 100 ± 20 - 13.2e - 10.6e - 3.5a, b - 2.8a, b - 20 - 13.2e - 3.0a, b 15 11.25 52 33 3.7a, b 2.4b, c - 50 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W °C Soldering Recommendations (Peak Temperature)c, d Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal...