SI7119DN

www.DataSheet.co.kr Si7119DN Vishay Siliconix P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) 1.05 at VGS = - 10 V 1.10 at VGS = - 6.0V ID (A) - 3.8e - 3.6e Qg (Typ.) 10.6 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile 100 % UIS and Rg Tested PowerPAK 1212-8 APPLICATIONS Active Clamp in Intermediate DC/DC Power Supplies 3.30 mm S 3.30 mm S 1 2 3 S S G 4 D 8 7 6 5 D D D G Bottom View D Ordering Information: Si7119DN-T1-E3 (Lead (Pb)-free) Si7119DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 200 ± 20 - 3.8e - 3.0e - 1.2a, b - 0.95a, b -5 - 5e - 3.0a, b 5 1.25 52 33 3.7a, b 2.4a, b - 50 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W °C Soldering Recommendations (Peak Temperature)c, d Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed ...