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New Product
Si7164DP
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) (Ω) 0.00625 at VGS = 10 V ID (A)a 60 Qg (Typ.) 49.5 nC
FEATURES
• • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
5.15 mm
6.15 mm
S 1 2 3 S S
• Primary Side Switch • POL • Intermediate Bus Converter
D
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: Si7164DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 60 ± 20 60g 60g 23.5b, c 18.8b, c 80 60g 5.2b, c 50 125 104 66.5 6.25b, c 4.0b, c - 55 to 150 260 Unit V
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 0.9 Maximum 20 1.2 Unit °C/W
Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W. g. Package limited. Document Number: 68738 S-81581-Rev. A, 07-Jul-08 www.vishay.com 1
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New Product
Si7164DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 4 A 0.75 41 64 27 14 TC = 25 °C 60 80 1.2 80 130 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = 8 V, Rg = 6 Ω VDD = 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω f = 1 MHz 0.4 VDS = 30 V, VGS = 10 V, ID = 10 A VDS = 30 V, VGS = 0 V, f = 1 MHz 2830 425 150 49.5 15.1 12.2 1.2 21 8 30 9 23 11 40 11 2.4 40 16 55 18 45 22 70 20 ns Ω 75 nC pF
a
Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs
Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C VDS ≥ 10 V, VGS = 10 V VGS = 10 V, ID = 10 A VDS = 15 V, ID = 10 A
Min. 60
Typ.
Max.
Unit V
66 - 10 2.5 4.5 ± 100 1 10 40 0.005 30 0.00625
mV/°C V nA µA A Ω S
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 68738 S-81581-Rev. A, 07-Jul-08
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
Si7164DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80 VGS = 10 thru 6 V 64 I D - Drain Current (A) I D - Drain Current (A) 8 TC = 25 °C 6 10
48
32 VGS = 5 V
4
16
2 TC = 125 °C TC = - 55 °C 0 2 4 6 8 10
0 0.0
0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.0065 3650
Transfer Characteristics
Ciss R DS(on) - On-Resistance.