Dual N-Channel MOSFET
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Si7228DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω)...
Description
www.DataSheet.co.kr
Si7228DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.020 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)f 26 4.1 nC 23 Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 UIS Tested Compliant to RoHS Directive 2002/95/EC
PowerPAK® 1212-8
APPLICATIONS
Synchronous Rectification Notebook System Power POL Low Current DC/DC
3.30 mm
S1
1 2
3.30 mm
G1 S2
D1
D2
3 4
D1
G2
8 7
D1 D2
G1
6 5
D2
G2
Bottom View
S1 N-Channel MOSFET
S2 N-Channel MOSFET
Ordering Information: Si7228DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 26 21 8.8a, b 7a, b 35 19 2.2a, b 14 9.8 23 14.8 2.6a, b 1.7a, b - 55 to 150 260 Unit V
A
mJ W
TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Ty...
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