SI7270DP

www.DataSheet.co.kr New Product Si7270DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)f 8 8 Qg (Typ.) 6.6 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK® SO-8 6.15 mm S1 Fixed Telecom - Server Synchronous Converter 5.15 mm 1 2 G1 S2 D1 D2 3 4 D1 G2 8 7 D1 D2 G1 6 5 D2 G2 Bottom View Ordering Information: Si7270DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 8f 8f a, 8 b, f 8a, b 35 8f 3.0a, b 15 11.2 17.8 11.4 3.6a, b 2.3a, b - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (300 µs) Source-Drain Current Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typ. 2...