SI7308DN

www.DataSheet.co.kr Si7308DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V ID (A)a 6 6 Qg (Typ.) 13 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm CCFL Inverter Class-D Amp D G Bottom View S Ordering Information: Si7308DN-T1-E3 (Lead (Pb)-free) Si7308DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 60 ± 20 6a 6a 5.4b, c 4.3b, c 20 6a 2.7b, c 11 6.1 19.8 12.7 3.2b, c 2.1b, c - 55 to 150 W mJ A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Steady State Symbol RthJA RthJC Typical 31 5 Maximum 39 6.3 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See So...