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SI7720DN Dataheets PDF



Part Number SI7720DN
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SI7720DN DatasheetSI7720DN Datasheet (PDF)

www.DataSheet.co.kr Si7720DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0125 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)e 12 12 Qg (Typ.) 13.7 nC FEATURES • Halogen-free • SkyFET™ Monolithic TrenchFET® Power MOSFET and Schottky Diode • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT PowerPAK 1212-8 3.30 mm S 1 2 3 S S 3.30 mm APPLICATIONS • N.

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www.DataSheet.co.kr Si7720DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0125 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)e 12 12 Qg (Typ.) 13.7 nC FEATURES • Halogen-free • SkyFET™ Monolithic TrenchFET® Power MOSFET and Schottky Diode • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT PowerPAK 1212-8 3.30 mm S 1 2 3 S S 3.30 mm APPLICATIONS • Notebook PC - System Power • Buck Converter • Synchronous Rectifier Switch D G 4 D 8 7 6 5 D D D G N-Channel MOSFET S Schottky Diode Bottom View Ordering Information: Si7720DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 30 ± 20 12e 12e 12a, b 10a, b 50 12e 3.4a, b 20 20 52 33 3.8a, b 2.4a, b - 50 to 150 260 °C mJ A Unit V W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 68787 S-81716-Rev. A, 04-Aug-08 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si7720DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. t ≤ 10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.3 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1790 310 130 30 13.7 5 4 1.2 23 13 29 12 11 10 22 8 2.4 45 25 55 24 22 20 45 16 ns Ω 45 21 nC pF VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VDS = 10 V, ID = 10 A 20 0.010 0.012 38 0.0125 0.015 0.035 3.5 30 1.2 2.5 ± 100 0.2 35 V nA mA A Ω S Symbol Test Conditions Min. Typ. Max. Unit www.vishay.com 2 Document Number: 68787 S-81716-Rev. A, 04-Aug-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si7720DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta Symbol IS ISM VSD trr Qrr ta tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 2 A 0.53 17 5.5 8 9 Test Conditions TC = 25 °C Min. Typ. Max. 12 50 0.7 30 10 Unit Drain-Source Body Diode Characteristics A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68787 S-81716-Rev. A, 04-Aug-08 www.vishay.com 3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si7720DN Vishay Siliconix T.


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