SI7748DP

www.vishay.com Si7748DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0048 at VGS = 10 V 0.0066 at VGS = 4.5 V ID (A) a 50 50 Qg (TYP.) 27.8 nC PowerPAK® SO-8 Single D D8 D7 D6 5 FEATURES SkyFETTM monolithic TrenchFET® power MOSFET and Schottky diode 100 % Rg and UIS tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Notebook - Vcore low-side D 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: Si7748DP-T1-GE3 (lead (Pb)-free and halogen-free) Schottky Diode G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 30 ± 20 50 a 50 a 23.5 b, c 18.6 b, c 150 50 a 4.3 b, c 30 45 56 31 4.8 b, c 3 b, c -55 to 150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) t ...