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Si7812DN
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 75 RDS(on) (Ω) 0.037 at VGS = 10 V 0.046 at VGS = 4.5 V ID (A) 16e 16e Qg (Typ.) 8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile
PowerPAK 1212-8
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
• Primary Side Switch
D
G
Bottom View Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free) Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 75 ± 20 16e 16e 7.2a, b 5.7a, b 25 16e 3.2a, b 15 11 52 33 3.8a, b 2.4a, b - 55 to 150 260 °C W mJ A Unit V
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73332 S-83050-Rev. D, 29-Dec-08 www.vishay.com 1
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Si7812DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 81 °C/W. t ≤ 10 s Steady State Symbol RthJA RthJC Typical 26 1.9 Maximum 33 2.4 Unit °C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 38 V, RL = 6.7 Ω ID ≅ 5.7 A, VGEN = 10 V, Rg = 1 Ω VDD = 38 V, RL = 6.7 Ω ID ≅ 5.7 A, VGEN .