CXT3906

CXT3904 NPN CXT3906 PNP SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3904 and CXT3906 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CXT3904 CXT3906 60 40 40 40 6.0 5.0 200 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CXT3904 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=30V, VEB=3.0V - 50 IBL VCE=30V, VEB=3.0V - 50 BVCBO IC=10μA 60 - BVCEO IC=1.0mA 40 - BVEBO IE=10μA 6.0 - VCE(SAT) IC=10mA, IB=1.0mA - 0.20 VCE(SAT) IC=50mA, IB=5.0mA - 0.30 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.85 VBE(SAT) IC=50mA, IB=5.0mA - 0.95 hFE VCE=1.0V, IC=0.1mA 40 - hFE VCE=1.0V, IC=1.0mA 70 - hFE VCE=1.0V, IC=10mA 100 300 hFE VCE=1.0V, IC=50mA 60 - hFE VCE=1.0V, IC=100mA 30 - CXT3906 MIN MAX - 50 - 50 40 - 40 - 5.0 - - 0.25 - 0.40 0.65 0.85 - 0.95 60 - 80 - 100 300 60 - 30 - UNITS V V V mA W °C °C/W UNITS nA nA V V V V V V V R8 (25-September 2018) CXT3904 NPN CXT3906 PNP...