Power MOSFET. FDH5500_F085 Datasheet

FDH5500_F085 Datasheet PDF, Equivalent


Part Number

FDH5500_F085

Description

N-Channel UltraFET Power MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDH5500_F085 Datasheet


FDH5500_F085 Datasheet
www.DataSheet.co.kr
FDH5500_F085
N-Channel UltraFET Power MOSFET
55V, 75A, 7mΩ
Features
„ Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A
„ Typ Qg(10) = 118nC at VGS = 10V
„ Simulation Models
-Temperature Compensated PSPICE and SABERTM
Models
„ Peak Current vs Pulse Width Curve
„ UIS Rating Curve
„ Related Literature
-TB334, “Guidelines for Soldering Surface Mount
Componets to PC Boards“
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ DC Linear Mode Control
„ Solenoid and Motor Control
„ Switching Regulators
„ Automotive Systems
October 2008
©2008 Fairchild Semiconductor Corporation
FDH5500_F085 Rev. A1
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

FDH5500_F085 Datasheet
www.DataSheet.co.kr
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VDGR
VGS
ID
Drain to Source Voltage
Drain to Gate Voltage (RGS = 20kΩ)
Gate to Source Voltage
Drain Current Continuous (TC < 135oC, VGS = 10V)
Pulsed
EAS
PD
TJ, TSTG
TL
Tpkg
Single Pulse Avalanche Energy
Power Dissipation
Dreate above 25oC
Operating and Storage Temperature
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
Max. Package Temp. for Soldering (Package Body for 10sec)
Thermal Characteristics
(Note 1)
(Note 1)
(Note 2)
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area
Ratings
55
55
±20
75
See Figure 4
864
375
2.5
-55 to + 175
300
260
0.4
30
Units
V
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDH5500
FDH5500_F085
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 50V, VGS = 0V
VDS = 45V
TC = 150oC
VGS = ±20V
55
-
-
-
- -V
-
-
1
250
μA
- ±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 75A, VGS= 10V
2 2.9 4
V
- 5.2 7 mΩ
Ciss
Coss
Crss
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 30V
ID = 75A
RL = 0.4Ω
Ig = 1.0mA
- 3565
-
pF
- 1310
-
pF
- 395 - pF
-
206 268
nC
-
118 153
nC
- 6.2 8.1 nC
- 17.8 -
nC
- 51 - nC
FDH5500_F085 Rev. A1
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/


Features Datasheet pdf www.DataSheet.co.kr FDH5500_F085 N-Chan nel UltraFET Power MOSFET October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features „ Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A „ Typ Qg(10) = 118nC at VGS = 10V „ Simulation Models -Temperature Compensa ted PSPICE and SABERTM Models „ Peak C urrent vs Pulse Width Curve „ UIS Rati ng Curve „ Related Literature -TB334, “Guidelines for Soldering Surface Mou nt Componets to PC Boards“ „ Qualifi ed to AEC Q101 „ RoHS Compliant Appli cations „ DC Linear Mode Control „ So lenoid and Motor Control „ Switching R egulators „ Automotive Systems ©2008 Fairchild Semiconductor Corporation FD H5500_F085 Rev. A1 1 www.fairchildsem i.com Datasheet pdf - http://www.DataS heet4U.net/ www.DataSheet.co.kr FDH55 00_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unl ess otherwise noted Symbol Drain to Sou rce Voltage VDSS VDGR VGS ID EAS PD TL Tpkg Gate to Source Voltage Drain Current Continuous (TC < 135oC, VGS = 10V) Pulsed.
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