DatasheetsPDF.com

ESD5V3S5US

Infineon Technologies

(ESD5V0SxUS) Multi-Channel TVS Diode Array

Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according ...


Infineon Technologies

ESD5V3S5US

File Download Download ESD5V3S5US Datasheet


Description
Multi-Channel TVS Diode Array ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 (ESD): ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) Working voltage: 5 V (5.3 V max.) Low clamping voltage Low reverse current < 5 µA Pb-free (RoHS compliant) package Applications Uni or bi-directional operation possible (see application example page 5) Mobile communication Consumer products (STB, MP3, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals ESD5V0SxUS ESD5V0S4US 65 4 ESD5V0S5US 65 4 ESD5V0S5US E6727 180° rotated in reel 65 4 12 3 12 3 Type ESD5V0S4US ESD5V0S5US ESD5V3S5US E6727* * Preliminary data 12 3 Package SOT363 SOT363 SOT363 Configuration 4 lines, uni-directional 5 lines, uni-directional 5 lines, uni-directional Marking E4s E5s on request 1 2011-06-17 ESD5V0SxUS Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge per diode1) Peak pulse current (tp = 8 / 20 µs) per diode2) Peak pulse power (tp = 8 / 20 µs) per diode VESD Ipp Ppk Operating temperature range Top Storage temperature Tstg Value 30 10 130 -55...125 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics - Reverse working voltage Breakdown voltage I(BR) = 1 mA Reverse current VR = 3.3 V VR = 5 V VRWM V(BR) ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)