ESD5V3S1B-02LRH

www.DataSheet.co.kr ESD5V3S1B-02LRH Silicon TVS Diode ESD / transient protection of data and power lines in low voltage applications according to: IEC61000-4-2 (ESD): ± 25 kV (air) 20 kV (contact) IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns) IEC61000-4-5 (surge): 5.5 A / 80 W (8/20 µs) Small form factor (0402 inch): 1.0 x 0.6 x 0.4 mm 3 Bi-directional, symmetrical working voltage up to ± 5.3 V Ultralow and symmetric clamping voltage Ultralow dynamic resistance 0.4 Ω Very fast response time Pb-free (RoHS compliant) package Qualified according AEC Q101 Applications Recommended to protect audio lines / microphone lines / speaker and headset systems in: Mobile phones Mobile TV Set top boxes MP3 players Minidisc players Portable entertainment electronics ESD5V3S1B-02LRH 1 2 Type ESD5V3S1B-02LRH Package TSLP-2-17 Configuration 1 line, bi-directional 1 Marking E1 2009-12-07 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ESD5V3S1B-02LRH Maximum Ratings at TA = 25°C, unless otherwise specified Parameter ESD air / contact discharge 1) Peak pulse current ( tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs2) Operating temperature range Storage temperature Symbol VESD I pp Ppk T op T stg Value 25 / 20 5.5 80 -55...125 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. Characteristics Reverse working voltage Breakdown voltage I(BR) = 1 mA Reverse current VR = 3.3 V...