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2SC2636 Dataheets PDF



Part Number 2SC2636
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description NPN Transistor
Datasheet 2SC2636 Datasheet2SC2636 Datasheet (PDF)

Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm ■ Features (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 3.5±0.1 4.5±0.1 • High transition frequency fT R 0.9 • M type package allowing easy automatic and manual insertion as R 0.7 well as stand-alone fixing to the printed circuit board 4.1±0.2 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit 1.0±0.1 2.4±0.2 (0.85) 0.55±0.1 0.45±0.05 2.0±0.2 e ) .

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Transistors 2SC2636 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation Unit: mm ■ Features (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 3.5±0.1 4.5±0.1 • High transition frequency fT R 0.9 • M type package allowing easy automatic and manual insertion as R 0.7 well as stand-alone fixing to the printed circuit board 4.1±0.2 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit 1.0±0.1 2.4±0.2 (0.85) 0.55±0.1 0.45±0.05 2.0±0.2 e ) Collector-base voltage (Emitter open) VCBO 30 1.25±0.05 V c type Collector-emitter voltage (Base open) VCEO 20 V n d ge. ed Emitter-base voltage (Collector open) VEBO 3 V le sta ntinu Collector current IC 50 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 3 2 1 (2.5) (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package inte ntines follopwlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min c ed in ce ty Collector-base voltage (Emitter open) tinu nan Emitter-base voltage (Collector open) M is iscon ainte Base-emitter voltage e/D e, m Forward current transfer ratio * D anc typ Transition frequency inten ance Power gain Ma ten Reverse transfer capacitance ain (Common base) ed m Reverse transfer capacitance (plan (Common emitter) VCBO VEBO VBE hFE fT GP Crb IC = 100 µA, IE = 0 30 IE = 10 µA, IC = 0 3 VCB = 10 V, IE = −2 mA VCE = 10 V, IC = 2 mA 25 VCB = 10 V, IE = −15 mA, f = 200 MHz 600 VCB = 10 V, IE = −1 mA, f = 100 MHz VCB = 6 V, IE = 0, f = 1 MHz Cre VCE = 10 V, IC = 1 mA, f = 10.7 MHz Typ Max 720 1 200 20 0.8 1 600 1.5 Unit V V mV  MHz dB pF pF Collector-base parameter rbb' • CC VCB = 10 V, IE = −10 mA, f = 31.9 MHz 25 ps Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank T S hFE 600 to 1 300 900 to 1 600 Publication date: March 2003 SJC00120BED 1 2SC2636 Collector power dissipation PC (mW) Base current IB (µA) PC  Ta 500 400 IC  VCE IC  IB 24 24 Ta = 25°C IB = 300 µA 20 20 VCE = 10 V Ta = 25°C 250 µA Collector current IC (mA) Collector current IC (mA) 16 16 300 200 µA 12 150 µA 12 200 8 100 µA 8 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 50 µA 0 0 6 12 18 Collector-emitter voltage VCE (V) 4 0 0 150 300 450 Base current IB (µA) e/ pe) IB  VBE c ty 400 e. d VCE = 10 V n d tag ue Ta=25°C a e cycle s iscontin 300 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) n uroduct lidfetyped, d 200 te tiningfourisPcontinue 100 in ndes foll,opwlaned d 0 a o clu pe 0 0.6 1.2 1.8 c d in e ty Base-emitter voltage VBE (V) IC  VBE 60 25°C VCE = 10 V 50 Ta = 75°C −25°C 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) VCE(sat)  IC 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 0.1 1 10 100 Collector current IC (mA) M is/Discontimnuaeintenanc hFE  IC e e, 240 1 600 D anc typ VCE = 10 V inten nce 200 Ma tena1200 in 160 ma Ta = 75°C (planed 120 25°C 800 fT  IE Ta = 25°C VCE = 10 V 6V Cre (pF) Cre  VCE 2.4 IC = 1 mA f = 10.7 MHz Ta = 25°C 2.0 1.6 1.2 −25°C 80 0.8 Transition frequency fT (MHz) 400 40 0.4 Reverse transfer capacitance (Common emitter) 0 0.1 1 10 100 Collector current IC (mA) 0 − 0.1 −1 −10 −100 Emitter current IE (mA) 0 0.1 1 10 100 Collector-emitter voltage VCE (V) Forward current transfer ratio hFE 2 SJC00120BED Reverse transfer impedance Zrb (Ω) Input susceptance bib (mS) 2SC2636 Zrb  IE 120 f = 2 MHz Ta = 25°C 100 80 60 GP  IE NF  IE 40 12 f = 100 MHz Rg = 50 Ω Ta = 25°C 10 30 VCE = 10 V 8 6V VCE = 10 V f = 100 MHz Rg = 50 kΩ Ta = 25°C 20 6 Noise figure NF (dB) Power gain GP (dB) 40 4 10 20 0 − 0.1 VCE = 6 V 10 V −1 −10 Emitter current IE (mA) 0 − 0.1 −1 −10 −100 Emitter current IE (mA) 2 0 − 0.1 −1 −10 −100 Emitter current IE (mA) e/ pe) bib  gib c ty 0 n d ge. ed yib = gib + jbib sta tinu VCB = 10 V le n −10 Forward transfer susceptance bfb (mS) Reverse transfer susceptance brb (mS) a elifecyc , disco −20 IE = −2 mA n u ct ped f=900MHz te tin Produuedty −30 −5mA 600 500 four ntin −40 300 200 in n llowing d disco −50 des fo , plane −60 a codinclu etype 0 10 20 30 40 50 Input conductance gib (mS) 0 − 0.4 brb  grb yrb = grb + jbrb VCB = 10 V 200 300 500 − 0.8 600 −1.2 f = 900 MHz −2 mA −1.6 IE = −5 mA −2.0 −2.4 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 0 Reverse transfer conductance grb (mS) M is/Discontimnuaeintenanc bob  gob e e, 12 D anc typ yob = gob + jbob n e VCE =.


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