Document
Transistors
2SC2636
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation
Unit: mm
■ Features
(0.4)
6.9±0.1 (1.5)
(1.5)
2.5±0.1 (1.0)
(1.0)
3.5±0.1
4.5±0.1
• High transition frequency fT
R 0.9
• M type package allowing easy automatic and manual insertion as
R 0.7
well as stand-alone fixing to the printed circuit board
4.1±0.2
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
1.0±0.1
2.4±0.2
(0.85) 0.55±0.1
0.45±0.05
2.0±0.2
e ) Collector-base voltage (Emitter open) VCBO
30
1.25±0.05
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
3
V
le sta ntinu Collector current
IC
50
mA
a e cyc isco Collector power dissipation
PC
400
mW
life d, d Junction temperature
Tj
150
°C
n u duct type Storage temperature
Tstg −55 to +150 °C
3
2
1
(2.5) (2.5)
1: Base 2: Collector 3: Emitter M-A1 Package
inte ntines follopwlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Emitter-base voltage (Collector open)
M is iscon ainte Base-emitter voltage
e/D e, m Forward current transfer ratio *
D anc typ Transition frequency
inten ance Power gain Ma ten Reverse transfer capacitance ain (Common base) ed m Reverse transfer capacitance (plan (Common emitter)
VCBO VEBO VBE hFE
fT GP Crb
IC = 100 µA, IE = 0
30
IE = 10 µA, IC = 0
3
VCB = 10 V, IE = −2 mA
VCE = 10 V, IC = 2 mA
25
VCB = 10 V, IE = −15 mA, f = 200 MHz 600
VCB = 10 V, IE = −1 mA, f = 100 MHz
VCB = 6 V, IE = 0, f = 1 MHz
Cre VCE = 10 V, IC = 1 mA, f = 10.7 MHz
Typ Max
720
1 200 20 0.8
1 600
1.5
Unit V V mV
MHz dB pF
pF
Collector-base parameter
rbb' • CC VCB = 10 V, IE = −10 mA, f = 31.9 MHz
25
ps
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
Rank
T
S
hFE
600 to 1 300 900 to 1 600
Publication date: March 2003
SJC00120BED
1
2SC2636
Collector power dissipation PC (mW)
Base current IB (µA)
PC Ta
500
400
IC VCE
IC IB
24
24
Ta = 25°C
IB = 300 µA
20
20
VCE = 10 V Ta = 25°C
250 µA
Collector current IC (mA)
Collector current IC (mA)
16
16
300
200 µA
12
150 µA
12
200
8
100 µA
8
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
4
50 µA
0
0
6
12
18
Collector-emitter voltage VCE (V)
4
0
0
150
300
450
Base current IB (µA)
e/ pe) IB VBE c ty 400
e. d VCE = 10 V
n d tag ue Ta=25°C a e cycle s iscontin 300
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
n uroduct lidfetyped, d 200
te tiningfourisPcontinue 100
in ndes foll,opwlaned d 0
a o clu pe 0
0.6
1.2
1.8
c d in e ty Base-emitter voltage VBE (V)
IC VBE
60
25°C
VCE = 10 V
50
Ta = 75°C
−25°C
40
30
20
10
0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
Ta = 75°C 25°C 0.1
−25°C
0.01
0.1
1
10
100
Collector current IC (mA)
M is/Discontimnuaeintenanc hFE IC
e e, 240
1 600
D anc typ VCE = 10 V
inten nce 200
Ma tena1200
in 160 ma Ta = 75°C
(planed 120
25°C
800
fT IE
Ta = 25°C
VCE = 10 V 6V
Cre
(pF)
Cre VCE
2.4
IC = 1 mA
f = 10.7 MHz
Ta = 25°C 2.0
1.6
1.2
−25°C
80
0.8
Transition frequency fT (MHz)
400
40
0.4
Reverse transfer capacitance (Common emitter)
0
0.1
1
10
100
Collector current IC (mA)
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
0
0.1
1
10
100
Collector-emitter voltage VCE (V)
Forward current transfer ratio hFE
2
SJC00120BED
Reverse transfer impedance Zrb (Ω)
Input susceptance bib (mS)
2SC2636
Zrb IE
120 f = 2 MHz Ta = 25°C
100
80
60
GP IE
NF IE
40
12
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
10
30 VCE = 10 V
8 6V
VCE = 10 V f = 100 MHz
Rg = 50 kΩ Ta = 25°C
20
6
Noise figure NF (dB)
Power gain GP (dB)
40
4
10
20 0 − 0.1
VCE = 6 V 10 V
−1
−10
Emitter current IE (mA)
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
2
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
e/ pe) bib gib c ty 0
n d ge. ed yib = gib + jbib
sta tinu VCB = 10 V le n −10
Forward transfer susceptance bfb (mS)
Reverse transfer susceptance brb (mS)
a elifecyc , disco −20 IE = −2 mA
n u ct ped f=900MHz
te tin Produuedty −30 −5mA
600 500
four ntin −40
300 200
in n llowing d disco −50
des fo , plane −60
a codinclu etype 0
10 20 30 40 50 Input conductance gib (mS)
0 − 0.4
brb grb
yrb = grb + jbrb VCB = 10 V
200 300 500
− 0.8 600
−1.2 f = 900 MHz
−2 mA
−1.6
IE = −5 mA
−2.0
−2.4 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 0 Reverse transfer conductance grb (mS)
M is/Discontimnuaeintenanc bob gob
e e, 12
D anc typ yob = gob + jbob
n e VCE =.