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New Product
SS8P5C, SS8P6C
Vishay General Semiconductor
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
eSMP ® Series
K
FEATURES
• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C • AEC-Q101 qualified J-STD-020,
1 2 TO-277A (SMPC)
K Cathode Anode 1 Anode 2
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max. 2 x 4.0 A 50 V, 60 V 120 A 20 mJ 0.56 V 150 °C
Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode Operating junction and storage temperature range total device per diode IF(AV) IFSM EAS TJ, TSTG VRRM SYMBOL SS8P5C S85C 50 8.0 4.0 120 20 - 55 to + 150 A mJ °C SS8P6C S86C 60 V A UNIT
Document Number: 89028 Revision: 17-May-11
For technical questions within your region, please contact one of the following: www.vishay.com
[email protected],
[email protected],
[email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
SS8P5C, SS8P6C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 2.0 A Instantaneous forward voltage per diode IF = 4.0 A IF = 2.0 A IF = 4.0 A Reverse current per diode Typical junction capacitance per diode Rated VR 4.0 V, 1 MHz TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL TYP. 0.55 0.65 0.48 0.56 IR (2) CJ 2.5 1.6 160 MAX. 0.70 V 0.60 50 10 μA mA pF UNIT
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER Typical thermal resistance per diode SYMBOL RJA RJL Note (1) Units mounted on recommended PCB 1 oz. pad layout
(1)
SS8P5C 60
SS8P6C
UNIT °C/W
3
ORDERING INFORMATION (Example)
PREFERRED P/N SS8P6C-M3/86A SS8P6C-M3/87A SS8P6CHM3/86A SS8P6CHM3/87A
(1) (1) (1)
UNIT WEIGHT (g) 0.10 0.10 0.10 0.10
PACKAGE CODE 86A 87A 86A 87A
BASE QUANTITY 1500 6500 1500 6500
DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel
Note Automotive grade
www.vishay.com 2
For technical questions within your region, please contact one of the following: Document Number: 89028
[email protected],
[email protected],
[email protected] Revision: 17-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
SS8P5C, SS8P6C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
10
10 000
Average Forward Rectified Current (A)
Instantaneous Reverse Current (µA)
Resistive or Inductive Load 8
TA = 150 °C 1000 TA = 125 °C 100
6
4
10
2
TL measured at the Cathode Band Terminal
1
TA = 25 °C
0 0 25 50 75 100 125 150 175
0.1 10 20 30 40 50 60 70 80 90 100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
3.0
D = 0.3 D = 0.5 D = 0.8 D = 0.2 D = 0.1 D = 1.0
1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
2.0
Junction Capacitance (pF)
Average Power Loss (W)
2.5
1.5 T
100
1.0
0.5 0 0 0.5 1.0 1.5 2.0 2.5
D = tp/T 3.0 3.5
tp 10 4.0 4.5 0.1 1 10 100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100 TA = 150 °C 10 TA = 125 °C
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1 TA = 25 °C 0.1
1.