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ST1200C14K1LP Dataheets PDF



Part Number ST1200C14K1LP
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Phase Control Thyristors
Datasheet ST1200C14K1LP DatasheetST1200C14K1LP Datasheet (PDF)

www.DataSheet.co.kr ST1200C..KP Series Vishay High Power Products Phase Control Thyristors (Stud Version), 1650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK A-24 (K-PUK) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 1650 A TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHAR.

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www.DataSheet.co.kr ST1200C..KP Series Vishay High Power Products Phase Control Thyristors (Stud Version), 1650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK A-24 (K-PUK) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 1650 A TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 1650 Ths 55 3080 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 30 500 A 32 000 4651 4250 1200 to 2000 200 - 40 to 125 V μs °C kA2s UNITS A °C A °C I2t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 12 14 ST1200C..K 16 18 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 1200 1400 1600 1800 2000 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 1300 1500 1700 1900 2100 100 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 94394 Revision: 23-Apr-10 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST1200C..KP Series Vishay High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 1650 (700) 55 (85) 3080 30 500 32 000 25 700 Sinusoidal half wave, initial TJ = TJ maximum 26 900 4651 4250 3300 3000 46 510 0.91 1.01 0.21 0.19 1.73 600 1000 kA2√s V mΩ V mA kA2s A UNITS A °C Phase Control Thyristors (Stud Version), 1650 A t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs VALUES 1000 1.9 μs 200 UNITS A/μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 100 UNITS V/μs mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94394 Revision: 23-Apr-10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST1200C..KP Series Phase Control Thyristors (Stud Version), 1650 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 1.4 1.1 0.9 10 TJ = TJ maximum, tp ≤ 5 ms TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 16 3 3.0 20 5.0 200 3.0 mA V mA MAX. UNITS W A V Vishay High Power Products 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs RthC-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC.


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