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ST1200C..KP Series
Vishay High Power Products
Phase Control Thyristors (Stud Version), 1650 A
FEATURES
• Center amplifying gate • Metal case with ceramic insulator • International standard case A-24 (K-PUK) • High profile hockey PUK
A-24 (K-PUK)
• Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
PRODUCT SUMMARY
IT(AV) 1650 A
TYPICAL APPLICATIONS
• DC motor controls • Controlled DC power supplies • AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) TEST CONDITIONS VALUES 1650 Ths 55 3080 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 30 500 A 32 000 4651 4250 1200 to 2000 200 - 40 to 125 V μs °C kA2s UNITS A °C A °C
I2t
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 12 14 ST1200C..K 16 18 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 1200 1400 1600 1800 2000 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 1300 1500 1700 1900 2100 100 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 94394 Revision: 23-Apr-10
For technical questions, contact:
[email protected]
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Datasheet pdf - http://www.DataSheet4U.net/
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ST1200C..KP Series
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 1650 (700) 55 (85) 3080 30 500 32 000 25 700 Sinusoidal half wave, initial TJ = TJ maximum 26 900 4651 4250 3300 3000 46 510 0.91 1.01 0.21 0.19 1.73 600 1000 kA2√s V mΩ V mA kA2s A UNITS A °C
Phase Control Thyristors (Stud Version), 1650 A
t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs VALUES 1000 1.9 μs 200 UNITS A/μs
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 100 UNITS V/μs mA
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For technical questions, contact:
[email protected]
Document Number: 94394 Revision: 23-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
ST1200C..KP Series
Phase Control Thyristors (Stud Version), 1650 A
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 1.4 1.1 0.9 10 TJ = TJ maximum, tp ≤ 5 ms TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 16 3 3.0 20 5.0 200 3.0 mA V mA MAX. UNITS W A V
Vishay High Power Products
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs RthC-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC.