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ST28S Dataheets PDF



Part Number ST28S
Manufacturers SEMTECH
Logo SEMTECH
Description NPN Silicon Epitaxial Planar Transistor
Datasheet ST28S DatasheetST28S Datasheet (PDF)

www.DataSheet.co.kr ST 28S NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Weight approx. 0.19g TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Bas.

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www.DataSheet.co.kr ST 28S NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Weight approx. 0.19g TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICM IB Ptot Tj TS Value 40 20 6 1 1.25 100 850 150 -55 to +150 Unit V V V A A mA mW ℃ ℃ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/06/2004 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ST 28S Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=5mA at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=2mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VBE=6V Collector Saturation Voltage at IC=600mA, IB=20mA Base Saturation Voltage at IC=600mA, IB=20mA Base Emitter Voltage at IC=10mA, VCE=1V Gain Bandwidth Product at VCE=10V, IC=50mA Collector Base Capacitance at VCB=10V, f=1MHz COB 9 pF fT 100 MHz VBE 0.66 1.0 V VBE(sat) 0.98 1.2 V VCE(sat) 0.55 V IEBO 100 nA ICBO 100 nA V(BR)EBO 6 V V(BR)CEO 20 V V(BR)CBO 40 V hFE hFE hFE 45 200 40 170 80 1000 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/06/2004 Datasheet pdf - http://www.DataSheet4U.net/ .


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