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ST280CPbF Series
Vishay High Power Products
Phase Control Thyristors (Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (A-PUK) • Lead (Pb)-free
TO-200AB (A-PUK)
RoHS
COMPLIANT
• Designed and qualified for industrial level
TYPICAL APPLICATIONS PRODUCT SUMMARY
IT(AV) 500 A
• DC motor controls • Controlled DC power supplies • AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) TEST CONDITIONS VALUES 500 Ths 55 960 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 7850 A 8220 308 281 400 to 600 100 - 40 to 125 V µs °C kA2s UNITS A °C A °C
I2 t
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 06 VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 600 VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA 500 700 30
ST280C..C
Document Number: 94400 Revision: 11-Aug-08
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www.DataSheet.co.kr
ST280CPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 500 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side(single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Maximum (typical) latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 500 (185) 55 (85) 960 7850 8220 6600 Sinusoidal half wave, initial TJ = TJ maximum 6900 308 281 218 200 3080 0.84 0.88 0.50 0.47 1.36 600 1000 (300) kA2√s V mΩ V mA kA2s A UNITS A °C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 1050 A, TJ = 125 °C, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs VALUES 1000 1.0 µs 100 UNITS A/µs
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