TSHG5210

www.vishay.com TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8390 DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS Directive 2002/95/EC and accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS in Infrared radiation source for operation with CMOS cameras High speed IR data transmission Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT TSHG5210 Ie (mW/sr) 230 Note Test conditions see table “Basic Characteristics”  (deg) ± 10 p (nm) 850 tr (ns) 20 ORDERING INFORMATION ORDERING CODE TSHG5210 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Forward current Peak forward current Surge forward current Power dissipati...