Transistors
2SC2778
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
■ Features • Optimum ...
Transistors
2SC2778
Silicon
NPN epitaxial planar type
For high-frequency amplification
Unit: mm
■ Features Optimum for RF amplification, oscillation, mixing, and IF of
0.40+–00..0150 3
0.16+–00..0160
0.4±0.2
1.50–+00..0255 2.8–+00..32
FM/AM radios
Mini type package, allowing downsizing of the equipment and
5˚
automatic insertion through the tape packing and the magazine
1
2
(0.65)
packing
(0.95) (0.95)
/ ■ Absolute Maximum Ratings Ta = 25°C
1.9±0.1 2.90+–00..0250
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
0 to 0.1 1.1–+00..12 1.1–+00..13
V
a e cle con Collector current
IC
30
mA
lifecy , dis Collector power dissipation
PC
200
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
10˚
Marking Symbol: K
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20
V
M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
/Dis ma Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
250
...