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TSHG5510 Dataheets PDF



Part Number TSHG5510
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description High Speed Infrared Emitting Diode
Datasheet TSHG5510 DatasheetTSHG5510 Datasheet (PDF)

www.vishay.com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm • High reliability • High radiant power • High radiant intensi.

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www.vishay.com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 38° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching to Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5510 Ie (mW/sr) 32 Note • Test conditions see table “Basic Characteristics“ ϕ (deg) ± 38 λp (nm) 830 tr (ns) 15 ORDERING INFORMATION ORDERING CODE TSHG5510 Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T = 0.5, tp = 100 μs tp = 100 μs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W Rev. 1.2, 23-Aug-11 1 Document Number: 81887 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com TSHG5510 Vishay Semiconductors PV - Power Dissipation (mW) IF - Forward Current (mA) 200 180 160 140 120 RthJA = 230 K/W 100 80 60 40 20 0 0 21142 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 120 100 80 RthJA = 230 K/W 60 40 20 0 0 21143 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Forward voltage IF = 100 mA, tp = 20 ms IF = 450 mA, tp = 100 μs IF = 1 A, tp = 100 μs VF 1.3 VF 1.5 VF Temperature coefficient of VF Reverse current Junction capacitance IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 TKVF IR Cj Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA Ie 18 Ie φe TKφe ϕ Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA λp Δλ TKλp tr Fall time Cut-off frequency IF = 100 mA tf IDC = 70 mA, IAC = 30 mA pp fc TYP. 1.45 1.75 2.1 - 1.8 110 32 320 55 - 0.35 ± 38 830 55 0.25 15 15 24 MAX. 1.7 2.1 10 54 UNIT V V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz Rev. 1.2, 23-Aug-11 2 Document Number: 81887 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TSHG5510 Vishay Semiconductors IF - Forward Current (mA) 1000 tp/T = 0.01 Tamb < 50 °C 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1 10 100 16031 tp - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration φe - Radiant Power (mW) 1000 100 10 1 tp = 100 µs tp/T = 0.002 0.1 1 21062 10 100 IF - Forward Current (mA) 1000 Fig. 6 - Radiant Power vs. Forward Current IF - Forward Current (A) 10 1 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 21009 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Φe, rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 0 740 800 900 16972_1 λ- Wavelength (nm) Fig. 7 - Relative Radiant Power vs. Wavelength Ie - Radiant Intensity (mW/sr) 1000 100 10 1 tp = 100 µs tp/T = 0.002 0.1 1 21010 10 100 IF - Forward Current (mA) 1000 Fig. 5 - Radiant Intensity vs. Forward Current Ie, rel - Relative Radiant Intensity 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90 21012 Angle (°) Fig. 8 - Relative Radiant Intensity vs. Angular Displacement.


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