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TSHG5510
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
21061
DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 38° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching to Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS • Infrared radiation source for operation with CMOS
cameras (illumination) • High speed IR data transmission
PRODUCT SUMMARY
COMPONENT TSHG5510
Ie (mW/sr) 32
Note • Test conditions see table “Basic Characteristics“
ϕ (deg) ± 38
λp (nm) 830
tr (ns) 15
ORDERING INFORMATION
ORDERING CODE TSHG5510
Note • MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
tp/T = 0.5, tp = 100 μs tp = 100 μs
t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB
VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
VALUE 5
100 200
1 180 100 - 40 to + 85 - 40 to + 100 260 230
UNIT V mA mA A
mW °C °C °C °C K/W
Rev. 1.2, 23-Aug-11
1
Document Number: 81887
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TSHG5510
Vishay Semiconductors
PV - Power Dissipation (mW) IF - Forward Current (mA)
200
180
160
140
120
RthJA = 230 K/W
100
80
60
40
20
0 0
21142
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80 RthJA = 230 K/W
60
40
20
0 0
21143
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 100 mA, tp = 20 ms IF = 450 mA, tp = 100 μs
IF = 1 A, tp = 100 μs
VF
1.3
VF
1.5
VF
Temperature coefficient of VF Reverse current Junction capacitance
IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0
TKVF IR Cj
Radiant intensity
Radiant power Temperature coefficient of φe Angle of half intensity
IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms IF = 100 mA
Ie
18
Ie
φe
TKφe
ϕ
Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time
IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA
λp Δλ TKλp tr
Fall time Cut-off frequency
IF = 100 mA
tf
IDC = 70 mA, IAC = 30 mA pp
fc
TYP. 1.45 1.75 2.1 - 1.8
110 32 320 55 - 0.35 ± 38 830 55 0.25 15 15 24
MAX. 1.7 2.1
10 54
UNIT V V V
mV/K μA pF
mW/sr mW/sr
mW %/K deg nm nm nm/K ns ns MHz
Rev. 1.2, 23-Aug-11
2
Document Number: 81887
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TSHG5510
Vishay Semiconductors
IF - Forward Current (mA)
1000
tp/T = 0.01 Tamb < 50 °C 0.02 0.05
0.1
0.2 0.5
100
0.01
0.1
1
10
100
16031
tp - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
φe - Radiant Power (mW)
1000
100
10
1
tp = 100 µs
tp/T = 0.002
0.1 1
21062
10
100
IF - Forward Current (mA)
1000
Fig. 6 - Radiant Power vs. Forward Current
IF - Forward Current (A)
10
1
0.1
0.01
0.001 0 0.5 1 1.5 2 2.5 3 3.5 4
21009
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Φe, rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
0
740
800
900
16972_1
λ- Wavelength (nm)
Fig. 7 - Relative Radiant Power vs. Wavelength
Ie - Radiant Intensity (mW/sr)
1000
100
10
1
tp = 100 µs
tp/T = 0.002
0.1 1
21010
10
100
IF - Forward Current (mA)
1000
Fig. 5 - Radiant Intensity vs. Forward Current
Ie, rel - Relative Radiant Intensity
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90
21012
Angle (°)
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement.