High Speed Infrared Emitting Diode
www.DataSheet.co.kr
TSHG6410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FE...
Description
www.DataSheet.co.kr
TSHG6410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FEATURES
Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition
94 8389
DESCRIPTION
TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
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APPLICATIONS
Infrared radiation source for operation with CMOS cameras High speed IR data transmission
PRODUCT SUMMARY
COMPONENT TSHG6410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20
Note Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE TSHG6410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwi...
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