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TSHG8200
High Speed Infrared Emitting Diode
Description
www.DataSheet.co.kr TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage ...
Vishay Siliconix
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TSHG8200
High Speed Infrared Emitting Diode
- Vishay Siliconix
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