www.DataSheet.co.kr
VS-UFB130FA40
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 130 A
FEATURES
• Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop
SOT-227
• Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level
DESCRIPTION PRODUCT SUMMARY
VR IF(AV) per module at TC = 102 °C trr Type 400 V 130 A 40 ns Modules - Diode FRED Pt®
The VS-UFB130FA40 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 113 °C TC = 25 °C TC = 113 °C Any terminal to case, t = 1 minute TEST CONDITIONS MAX. 400 65 800 144 2500 - 55 to 175 UNITS V A W V °C
Document Number: 93602 Revision: 12-May-11
For technical questions, contact:
[email protected]
www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.DataSheet.co.kr
VS-UFB130FA40
Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM IRM CT IR = 100 μA IF = 60 A IF = 60 A, TJ = 175 °C VR = VR rated TJ = 175 °C, VR = VR rated VR = 400 V TEST CONDITIONS MIN. 400 TYP. 1.16 0.93 67 MAX. 1.37 1.09 50 1 μA mA pF V UNITS
Reverse leakage current Junction capacitance
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 40 86 155 8.4 18.4 350 1400 MAX. A ns UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink Weight Mounting torque Case style SYMBOL RthJC RthCS Flat, greased surface TEST CONDITIONS MIN. TYP. 0.10 30 1.3 SOT-227 MAX. 0.86 0.43 g Nm °C/W UNITS
www.vishay.com 2
For technical questions, contact:
[email protected]
Document Number: 93602 Revision: 12-May-11
Datasheet pdf - http://www.DataSheet4U.net/
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.DataSheet.co.kr
VS-UFB130FA40
Insulated Ultrafast Rectifier Module, 130 A Vishay Semiconductors
IF - Instantaneous Forward Current (A)
1000
1000
IR - Reverse Current (µA)
100 10 1 0.1 0.01 0.001 TJ = 25 °C TJ = 175 °C
100 TJ = 175 °C TJ = 25 °C 10
1 0 0.5 1 1.5 2 2.5
0
50
100
150
200
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
1000
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10 1 10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
0.1
DC
PDM t1
Single pulse (thermal resistance)
t2
Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1
0.01 0.0001
.
10
0.001
0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 93602 Revision: 12-May-11
For technical questions, contact:
[email protected]
www.vishay.com 3
Datasheet pdf - http://www.DataSheet4U.net/
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.DataSheet.co.kr
VS-UFB130FA40
Vishay Semiconductors Insulated Ultrafast Rectifier Module,.