2SC2812N

Ordering number : EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Marking : 2SA1179N : M / 2SC2812N : L ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1mA 2SC2812N : VCE=6V, IC=1mA 2SA1179N : VCE=--6V, IC=--10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0A Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --55 to +150 Unit V V V mA mA mA mW °C °C Ratings min typ 200 100 (180) (4.0)3.0 (--0.15)0.1 (--)55 (--...