2SC2880

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications · High voltage: VCEO = 150 V · High transition frequency: fT = 120 MHz · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SA1200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) 200 150 5 50 10 500 800 Junction temperature Storage temperature range Tj 150 Tstg −55 to 150 Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t) Unit V V V mA mA mW °C °C Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2002-08-13 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = 200 V, IE = 0 VEB = 5 V, IC = 0 hFE (Note 2) VCE = 5 V, IC = 10 mA VCE (sat) IC = 10 mA, IB = 1 mA VBE VCE = 5 V, IC = 30 mA fT VCE = 30 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note 2: hFE classification O: 70 to 140, Y: 120 to 240 Marking Type name hFE classification AO 2SC2880 Min Typ. Max Unit ― ― 0.1 µA ― ― 0.1 µA 70 ― 240 ― ― ― 0.5 V ― ― 1 V ― 120 ― MHz ― 3.5 5.0 pF 2 2002-08-13 Collector ...