www.DataSheet.co.kr
New Product
V60100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Re...
www.DataSheet.co.kr
New Product
V60100P
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.456 V at IF = 10 A
FEATURES
TMBS®
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation
3 2 1
Low thermal resistance Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 100 V 350 A 0.657 V 150 °C
MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM IRRM dV/dt TJ, TSTG V60100P 100 60 30 350 1.0 10 000 - 40 to ...