V60100PW

www.vishay.com V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A TMBS® FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 350 A EAS at L = 180 mH VF at IF = 30 A 700 mJ 0.66 V TJ max. 150 °C Package TO-3PW Diode variations Dual common cathode MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated lea...