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V60120C Dataheets PDF



Part Number V60120C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V60120C DatasheetV60120C Datasheet (PDF)

www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.71 V 150 °C TO-220AB, D2PAK (TO-263AB) Circuit configurati.

  V60120C   V60120C


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www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.71 V 150 °C TO-220AB, D2PAK (TO-263AB) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB and D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH  per diode EAS Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IRRM dV/dt TJ, TSTG V60120C VB60120C 120 60 30 300 260 0.5 10 000 -40 to +150 UNIT V A A mJ A V/μs °C Revision: 19-Jun-2018 1 Document Number: 88976 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V60120C, VB60120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. Breakdown voltage Instantaneous forward voltage per diode Reverse current at rated VR per diode IR = 1.0 mA IF = 5 A IF = 15 A IF = 30 A IF = 5 A IF = 15 A IF = 30 A VR = 90 V VR = 120 V TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VBR VF (1) IR (2) 120 (minimum) 0.48 0.66 0.88 0.41 0.58 0.71 14 11 40 15 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms MAX. - 0.95 - 0.75 - 500 45 UNIT V V μA mA μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60120C Typical thermal resistance per diode RJC 2.2 VB60120C 2.2 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) TO-220AB V60120C-E3/4W 1.89 TO-263AB VB60120C-E3/4W 1.38 TO-263AB VB60120C-E3/8W 1.38 PACKAGE CODE 4W 4W 8W BASE QUANTITY 50/tube 50/tube 800/reel  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) DELIVERY MODE Tube Tube Tape and reel Average Forward Current (A) Average Power Loss (W) 70 Resistive or Inductive Load 60 50 40 30 20 10 0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Forward Current Derating Curve 30 D = 0.8 D = 0.5 25 D = 0.3 20 D = 0.2 D = 0.1 15 D = 1.0 10 T 5 D = tp/T tp 0 0 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Jun-2018 2 Document Number: 88976 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Peak Forward Surge Current (A) 350 TJ = TJ max. 300 8.3 ms Single Half Sine-Wave 250 200 150 100 50 0 1 10 100 Number of Cycles at 60 Hz Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 TA = 150 °C TA = 125 °C 10 TA = 25 °C 1 Instantaneous Forward Current (A) 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 0.1 0.01 TA = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Volt.


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