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V60120C, VB60120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.41 V at IF = 5 A
TO-220AB
TMBS ® D2PAK (TO-263AB)
K
3 2 1
V60120C
PIN 1
PIN 2
PIN 3
CASE
2 1
VB60120C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 120 V 300 A 0.71 V 150 °C
TO-220AB, D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package) • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA Case: TO-220AB and D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH per diode
EAS
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt TJ, TSTG
V60120C
VB60120C 120 60 30
300
260
0.5
10 000 -40 to +150
UNIT V A
A
mJ
A V/μs °C
Revision: 19-Jun-2018
1 Document Number: 88976
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V60120C, VB60120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage Instantaneous forward voltage per diode
Reverse current at rated VR per diode
IR = 1.0 mA IF = 5 A IF = 15 A IF = 30 A IF = 5 A IF = 15 A IF = 30 A
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VBR VF (1)
IR (2)
120 (minimum) 0.48 0.66 0.88 0.41 0.58 0.71 14 11 40 15
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
MAX. -
0.95 -
0.75 -
500 45
UNIT V
V
μA mA μA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60120C
Typical thermal resistance per diode
RJC
2.2
VB60120C 2.2
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V60120C-E3/4W
1.89
TO-263AB
VB60120C-E3/4W
1.38
TO-263AB
VB60120C-E3/8W
1.38
PACKAGE CODE 4W 4W 8W
BASE QUANTITY 50/tube 50/tube 800/reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE Tube Tube
Tape and reel
Average Forward Current (A) Average Power Loss (W)
70 Resistive or Inductive Load
60
50
40
30
20
10
0 0 25 50 75 100 125 150 Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
30 D = 0.8
D = 0.5 25
D = 0.3
20 D = 0.2
D = 0.1 15
D = 1.0
10 T
5
D = tp/T
tp
0 0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 19-Jun-2018
2 Document Number: 88976
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Peak Forward Surge Current (A)
350 TJ = TJ max.
300 8.3 ms Single Half Sine-Wave
250
200
150
100
50
0 1 10 100 Number of Cycles at 60 Hz
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode
100
TA = 150 °C TA = 125 °C 10
TA = 25 °C 1
Instantaneous Forward Current (A)
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (mA)
100 TA = 150 °C
10 TA = 125 °C
1
0.1 0.01
TA = 25 °C
0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Volt.