V80100P

www.DataSheet.co.kr New Product V80100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A FEATURES TMBS® Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation 3 2 1 Low thermal resistance Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TJ max. 80 A 100 V 500 A 0.667 V 150 °C MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM IRRM dV/dt TJ, TSTG V80100P 100 80 40 500 1.0 10 000 - 40 to + 15...