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VBPW34FASR Dataheets PDF



Part Number VBPW34FASR
Manufacturers Vishay
Logo Vishay
Description Silicon PIN Photodiode
Datasheet VBPW34FASR DatasheetVBPW34FASR Datasheet (PDF)

www.DataSheet.co.kr VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity VBPW34FAS • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times • • • • Angle of half sensitivity: ϕ = ± 65° Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoH.

  VBPW34FASR   VBPW34FASR


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www.DataSheet.co.kr VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity VBPW34FAS • Daylight blocking filter matched with 870 nm to 950 nm emitters • Fast response times • • • • Angle of half sensitivity: ϕ = ± 65° Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC VBPW34FASR and in 21726 APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters DESCRIPTION VBPW34FAS and VBPW34FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. PRODUCT SUMMARY COMPONENT VBPW34FAS VBPW34FASR Note • Test conditions see table “Basic Characteristics” Ira (µA) 55 55 ϕ (deg) ± 65 ± 65 λ0.5 (nm) 780 to 1050 780 to 1050 ORDERING INFORMATION ORDERING CODE VBPW34FAS VBPW34FASR Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel PACKAGE FORM Gullwing Reverse gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow sloder profile fig. 8 Tamb ≤ 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W Document Number: 81127 Rev. 1.1, 20-Apr-10 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm TEST CONDITION IF = 50 mA IR = 100 µA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V SYMBOL VF V(BR) Iro CD CD Vo TKVo Ik TKIk Ira ϕ λp λ 0.5 NEP tr tf 45 60 2 70 25 350 - 2.6 50 0.1 55 ± 65 950 780 to 1050 4 x 10-14 100 100 40 30 MIN. TYP. 1 MAX. 1.3 UNIT V V nA pF pF mV mV/K µA %/K µA deg nm nm W/√Hz ns ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 Iro - Reverse Dark Current (nA) 1.4 1.2 100 VR = 5 V λ = 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8403 Tamb - Ambient Temperature (°C) 94 8409 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81127 Rev. 1.1, 20-Apr-10 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VBPW34FAS, VBPW34FASR Silicon PIN Photodiode Vishay Semiconductors S(λ)φ, rel - Relative Spectral Sensitivity 10 1000 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 700 800 900 1000 λ - Wavelength (nm) 1100 Ira - Reverse Light Current (µA) 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 12787 0.1 1 Ee - Irradiance (mW/cm2) 21743 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 0° 10° 20° 30° Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA) 1 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 1 0.1 12788 λ = 950 nm 1 10 100 VR - Reverse Voltage (V) 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 80 CD - Diode Capacitance (pF) 60 E=0 f = 1 MHz 40 20 0 0.1 94 8407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 81127 Rev. 1.1, 20-Apr-10 For technical questions, contact: [email protected] www.vishay.com 3 Datasheet pdf - http://www.DataSheet4U.net/ ϕ - Angular Displacement www.DataSheet.co.kr VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PI.


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