DatasheetsPDF.com

BUS-Port ESD-Protection. VBUS054CV-06S Datasheet

DatasheetsPDF.com

BUS-Port ESD-Protection. VBUS054CV-06S Datasheet






VBUS054CV-06S ESD-Protection. Datasheet pdf. Equivalent




VBUS054CV-06S ESD-Protection. Datasheet pdf. Equivalent





Part

VBUS054CV-06S

Description

4-Line BUS-Port ESD-Protection



Feature


www.DataSheet.co.kr VBUS054CV-06S Visha y Semiconductors 4-Line BUS-Port ESD-P rotection Features • • • • • Ultra compact SOT-23-6L package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 1.2 pF ESD-pr otection acc. IEC 61000-4-2 ± 30 kV co ntact discharge ± 30 kV air discharge • High surge current acc. IEC61000-4- 5 IPP > 11 A • Compliant to RoHS.
Manufacture

Vishay

Datasheet
Download VBUS054CV-06S Datasheet


Vishay VBUS054CV-06S

VBUS054CV-06S; directive 2002/95/EC and in accordance to WEEE 2002/96/EC 6 5 4 1 22037 2 3 22036 Marking (example only) XX YYY YYY = Type code (see table below) XX = Date code 22035 Ordering Informatio n Device name VBUS054CV-06S Ordering co de VBUS054CV-06S-G-08 Taped units per r eel (8 mm tape on 7" reel) 3000 Minimum order quantity 15 000 Package Data De vice name VBUS054C.


Vishay VBUS054CV-06S

V-06S Package name SOT-23-6L Marking cod e 4CV Weight 15.2 mg Molding compound f lammability rating UL 94 V-0 Moisture s ensitivity level MSL level 1 (according J-STD-020) Soldering conditions 260 ° C/10 s at terminals Absolute Maximum R atings Parameter Test conditions Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 5 to pi n 2 acc. IEC 61000-4.


Vishay VBUS054CV-06S

-5; tP = 8/20 µs; single shot Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; sin gle shot Contact discharge acc. IEC 610 00-4-2; 10 pulses Air discharge acc. IE C 61000-4-2; 10 pulses Junction tempera ture Symbol IPPM IPPM PPP PPP VESD VESD TJ Value 11 13 242 246 ± 30 ± 30 - 4 0 to + 85 Unit A A W W .

Part

VBUS054CV-06S

Description

4-Line BUS-Port ESD-Protection



Feature


www.DataSheet.co.kr VBUS054CV-06S Visha y Semiconductors 4-Line BUS-Port ESD-P rotection Features • • • • • Ultra compact SOT-23-6L package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 1.2 pF ESD-pr otection acc. IEC 61000-4-2 ± 30 kV co ntact discharge ± 30 kV air discharge • High surge current acc. IEC61000-4- 5 IPP > 11 A • Compliant to RoHS.
Manufacture

Vishay

Datasheet
Download VBUS054CV-06S Datasheet




 VBUS054CV-06S
www.DataSheet.co.kr
4-Line BUS-Port ESD-Protection
VBUS054CV-06S
Vishay Semiconductors
Features
• Ultra compact SOT-23-6L package
• 4-line USB ESD-protection
• Low leakage current
• Low load capacitance CD = 1.2 pF
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 IPP > 11 A
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
22036
654
123
22037
Marking (example only)
YYY
22035
Ordering Information
Device name
VBUS054CV-06S
Ordering code
VBUS054CV-06S-G-08
YYY = Type code (see table below)
XX = Date code
Taped units per reel
(8 mm tape on 7" reel)
3000
Minimum order quantity
15 000
Package Data
Device name
Package
name
Marking
code
Weight
Molding compound
flammability rating
VBUS054CV-06S SOT-23-6L 4CV 15.2 mg
UL 94 V-0
Moisture sensitivity level
MSL level 1
(according J-STD-020)
Soldering conditions
260 °C/10 s at terminals
Absolute Maximum Ratings
Parameter
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Test conditions
Pin 1, 3, 4 or 6 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Pin 5 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Pin 1, 3, 4 or 6 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Pin 5 to pin 2
acc. IEC 61000-4-5; tP = 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
IPPM
IPPM
PPP
PPP
VESD
VESD
TJ
Value
11
13
242
246
± 30
± 30
- 40 to + 85
Unit
A
A
W
W
kV
kV
°C
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number 83299
Rev. 1.1, 28-May-10
For technical support, please contact: ESDprotection@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VBUS054CV-06S
www.DataSheet.co.kr
VBUS054CV-06S
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VBUS054CV-06S
Date line: pin 1 , 3, 4 or 6 to pin 2
Parameter
Test conditions/remarks
Symbol
Min.
Typ.
Max.
Unit
Protection paths
Number of line which can be protected
Nlines
4 lines
Reverse working voltage
at IR = 0.1 µA
VRWM
5.5
V
Reverse current
at VIN = VRWM = 5.5 V
IR
0.01 0.1
µA
Reverse breakdown voltage
at IR = 1 mA
VBR 7 7.9 8.6 V
Reverse clamping voltage
at IPP = 11 A; acc. IEC 61000-4-5
VC
18 22
V
Forward clamping voltage
Data line capacitance
Line Symmetry
at IF = 11 A; acc. IEC 61000-4-5
VR (at I/O pin) = 0 V;
VR (at pin 5) = 5 V; f = 1 MHz
Difference of the line capacitances
VF
CD
dCD
5 6.5 V
1.2 2.5 pF
0.2 pF
VBUS054CV-06S
VBUS-line: pin 5 to pin 2
Parameter
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Line capacitance
Test conditions/remarks
at IR = 0.1 µA
at VIN = VRWM = 5.5 V
at IR = 1 mA
at IPP = 13 A; acc. IEC 61000-4-5
at IF = 13 A; acc. IEC 61000-4-5
VR (at pin 5) = 0 V; f = 1 MHz
Symbol
VRWM
IR
VBR
VC
VF
CD
Min.
5.5
6.3
Typ.
6.6
0.01
7.1
18
190
Max.
0.1
8
22
7
Unit
V
µA
V
V
V
pF
Application Note
With the VBUS054CV-06S a double, high speed USB-port can be protected against transient voltage signals.
Negative transients will be clamped close below the ground level while positive transients will be clamped close
above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The
high speed data lines, D1+, D2+, D1- and D2- , are connected to pin 1, 3, 4 and 6. As long as the signal voltage
on the data lines is between the ground- and the VBUS -level, the low capacitance PN-diodes offer a very high
isolation to VBUS , ground and to the other data lines. But as soon as any transient signal exceeds this working
range, one of the PN-diodes gets in the forward mode and clamps the transient to ground or the avalanche
break through voltage level.
www.vishay.com
2
For technical support, please contact: ESDprotection@vishay.com
Document Number 83299
Rev. 1.1, 28-May-10
Datasheet pdf - http://www.DataSheet4U.net/




 VBUS054CV-06S
www.DataSheet.co.kr
VBUS054CV-06S
Vishay Semiconductors
t
w
VBUS
i D1+
n D1-
U
S
B
-
P D2+
o
r D2-
t
GND
22078
654
123
R
E
C
E
I
V
E
R
IC
Typical Characteristics (Tamb = 25 °C, unless otherwise specified)
120 %
100 %
Rise time = 0.7 ns to 1 ns
80 %
60 %
53 %
40 %
27 %
20 %
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
2.5
f = 1 MHz
2.0
1.5
Pin 1, 3, 4 or 6 to Pin 2
1.0
0.5
0
0123456
22026
VR (V)
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
100 %
8 µs to 100 %
80 %
60 %
40 %
20 µs to 50 %
20 %
0%
0
20548
10 20 30
Time (µs)
40
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
200
f = 1 MHz
180
160
140 Pin 5 to Pin 2
120
100
80
60
40
20
0
0 1 2 34 56
22027
VR (V)
Figure 4. Typical Capacitance CD vs. Reverse Voltage VR
Document Number 83299
Rev. 1.1, 28-May-10
For technical support, please contact: ESDprotection@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






Recommended third-party VBUS054CV-06S Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)