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VEMI355A-HAF
Vishay Semiconductors
3-Channel EMI-Filter with ESD-Protection
FEATURES
• Ultra compact LLP75-7L package
6 7 5 4
• 3-channel EMI-filter and ESD-protection • Low leakage current • Line resistance RS = 50 Ω • Typical cut off frequency f3dB = 100 MHz
20517
1
19423
2
3
1
• ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
MARKING (example only)
XX YY
Dot = pin 1 marking YY = type code (see table below) XX = date code
21001
ORDERING INFORMATION
DEVICE NAME VEMI355A-HAF ORDERING CODE VEMI355A-HAF-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) 3000 MINIMUM ORDER QUANTITY 15 000
PACKAGE DATA
DEVICE NAME VEMI355A-HAF PACKAGE NAME LLP75-7L TYPE CODE 9E WEIGHT 4.2 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER Peak pulse current ESD immunity Operating temperature Storage temperature TEST CONDITIONS All I/O pin to pin 7; acc. IEC 61000-4-5; tp = 8/20 μs; single shot Contact discharge acc. IEC61000-4-2; 10 pulses Air discharge acc. IEC61000-4-2; 10 pulses Junction temperature SYMBOL IPPM VESD TJ TSTG VALUE 4 ± 30 ± 30 - 40 to + 125 - 55 to + 150 UNIT A kV °C °C
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83313 Rev. 1.0, 21-Apr-10 For technical questions, contact:
[email protected] www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEMI355A-HAF
Vishay Semiconductors
APPLICATION NOTE
With the VEMI355A-HAF 3 different signal or data lines can be filtered and clamped to ground. Due to the different clamping levels in forward and reverse direction the clamping behavior is Bidirectional and Asymmetric (BiAs).
3-Channel EMI-Filter with ESD-Protection
L1IN L2IN L3IN
1 7 2 3
6 5 4
L1OUT L2OUT L3OUT
19420
19424
19421
The 3 independent EMI-filter are placed between pin 1 and pin 6 pin 2 and pin 5, and pin 3 and pin 4. They all are connected to a common ground pin 7 on the backside of the package. Each filter is symmetrical so that all ports (pin 1 to 6) can be used as input or output. The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output to ground. These Z-diodes are characterized by the breakthrough voltage level (VBR) and the diode capacitance (CD). Below the breakthrough voltage level the Z-diodes can be considered as capacitors. Together with these capacitors and the line resistance RS between input and output the device works as a low pass filter. Low frequency signals (f < f3dB) pass the filter while high frequency signals (f > f3dB) will be shorted to ground through the diode capacitances CD.
RS In (pin 1, 2, 3) CD Out (pin 4, 5, 6)
CD
GND (pin 7)
21060
Each filter is symmetrical so that both ports can be used as input or output.
www.vishay.com 2
For technical questions, contact:
[email protected]
Document Number: 83313 Rev. 1.0, 21-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEMI355A-HAF
3-Channel EMI-Filter with ESD-Protection
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VEMI355A-HAF (Tamb = 25 °C, unless otherwise specified)
PARAMETER Protection paths Reverse stand off voltage Reverse current Reverse break down voltage TEST CONDITIONS/REMARKS Number of channels which can be protected at IR = 1 μA each input to pin 2 at VR = 5 V each input to pin 2 Each input to pin 2 at IR = 1 mA at IPP = 1 A applied at the input, measured at the output; acc. IEC 61000-4-5 at IPP = IPPM = 4 A applied at the input, measured at the output; acc. IEC 61000-4-5 at IPP = - 1 A applied at the input, measured at the output; acc. IEC 61000-4-5 at IPP = IPPM = - 4 A applied at the input, measured at the output; acc. IEC 61000-4-5 at VR = 0 V; f = 1 MHz Input capacitance at VR = 2.5 V; f = 1 MHz ESD-clamping voltage Line resistance Cut-off frequency at ± 30 kV ESD-pulse acc. IEC 61000-4-2 Measured between input and output; IS = 10 mA VIN = 0 V; measured in a 50 Ω system CIN VCESD RS f3dB 45 37 7.5 50 100 55 pF V Ω MHz SYMBOL Nchannel VRWM IR VBR VC-out VC-out VC-out VC-out CIN MIN. 5 6 -1 - 1.2 TYP. 60 MAX. 3 1 7.8 8 UNIT channel V μA V V V V V pF
Pos. clamping voltage
Neg. clamping voltage
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 % Rise time = 0.7 ns to 1 ns 100 % 80 % 80 % 60 %
53 %
8 µs to 100 %
Discharge Current IESD
100 %
IPPM
60 % 20 µs to 50 % 40 % 20 % 0% 0 10 20 30 40
40 %
27 %
20 % 0% - 10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
20548
Time (µs)
Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Document Number: 83313 Rev. 1.0, 21-Apr-10
For t.