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NPN Phototransistor. VEMT2000X01 Datasheet

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NPN Phototransistor. VEMT2000X01 Datasheet






VEMT2000X01 Phototransistor. Datasheet pdf. Equivalent




VEMT2000X01 Phototransistor. Datasheet pdf. Equivalent





Part

VEMT2000X01

Description

Silicon NPN Phototransistor

Manufacture

Vishay

Datasheet
Download VEMT2000X01 Datasheet


Vishay VEMT2000X01

VEMT2000X01; www.DataSheet.co.kr VEMT2000X01, VEMT20 20X01 Vishay Semiconductors Silicon NP N Phototransistor FEATURES • Package type: surface mount • Package form: G W, RGW • Dimensions (L x W x H in mm) : 2.3 x 2.3 x 2.8 • AEC-Q101 qualifie d • High radiant sensitivity • Dayl ight blocking filter matched with 830 n m to 950 nm IR emitters • Fast respon se times 21568 VEMT2020X01 VEM.


Vishay VEMT2000X01

T2000X01 • Angle of half sensitivity:  = ± 15° • Package matched with IR emitter series VSMB2000X01 • Floo r life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering Compliant to RoHS Directive 2002/95/E C and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249 -2-21 definition DESCRIPTION VEMT2000X 01 series are silicon NPN epitaxia.


Vishay VEMT2000X01

l planar phototransistors with daylight blocking filter in a miniature, black d ome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. APPLICATIONS Detector in automotive applications • Photo interrupters • Miniature sw itches • Counters • Encoders • Po sition sensors PRODUCT SUMMARY COMPONE NT VEMT2000X01 VEMT2020X01 Not.



Part

VEMT2000X01

Description

Silicon NPN Phototransistor

Manufacture

Vishay

Datasheet
Download VEMT2000X01 Datasheet




 VEMT2000X01
www.DataSheet.co.kr
VEMT2000X01, VEMT2020X01
Vishay Semiconductors
Silicon NPN Phototransistor
21568
VEMT2020X01
VEMT2000X01
DESCRIPTION
VEMT2000X01 series are silicon NPN epitaxial planar
phototransistors with daylight blocking filter in a miniature,
black dome lens package for surface mounting. Filter
bandwidth is matched with 830 nm to 950 nm IR emitters.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
• Fast response times
• Angle of half sensitivity: = ± 15°
• Package matched with IR emitter series VSMB2000X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT
VEMT2000X01
VEMT2020X01
Ica (mA)
6
6
Note
• Test condition see table “Basic Characteristics”
(deg)
± 15
± 15
0.5 (nm)
790 to 970
790 to 970
ORDERING INFORMATION
ORDERING CODE
VEMT2000X01
VEMT2020X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
VCEO
Emitter collector voltage
VECO
Collector current
IC
Power power dissipation
Tamb 75 °C
PV
Junction temperature
Tj
Operating temperature range
Tamb
VALUE
20
7
50
100
100
- 40 to + 100
UNIT
V
V
mA
mW
°C
°C
Document Number: 81595
Rev. 1.2, 21-Feb-11
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VEMT2000X01
www.DataSheet.co.kr
VEMT2000X01, VEMT2020X01
Vishay Semiconductors Silicon NPN Phototransistor
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Acc. reflow profile fig. 8
Acc. J-STD-051
Tstg
Tsd
RthJA
VALUE
- 40 to + 100
260
250
UNIT
°C
°C
K/W
120
100
80
60
RthJA = 250 K/W
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21619
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
IC = 0.1 mA
VCE = 5 V, E = 0
VCE = 0 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V
VCEO
ICEO
CCEO
Ica
20
3
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Temperature coefficient of Ica
IC = 0.05 mA
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V
p
0.5
VCEsat
TkIca
TYP.
1
25
6
± 15
860
790 to 970
1.1
MAX.
100
9
0.4
UNIT
V
nA
pF
mA
deg
nm
nm
V
%/K
www.vishay.com
2
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81595
Rev. 1.2, 21-Feb-11
Datasheet pdf - http://www.DataSheet4U.net/





 VEMT2000X01
www.DataSheet.co.kr
VEMT2000X01, VEMT2020X01
Silicon NPN Phototransistor Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1000
IF = 0
100
VCE = 70 V
VCE = 25 V
VCE = 5 V
10
20594
1
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
100
10
1
VCE = 5 V,
λ = 950 nm
0.1
0.01
0.01
21573
0.1 1
Ee - Irradiance (mW/cm²)
10
Fig. 3 - Collector Light Current vs. Irradiance
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
21574
0
600 650 700 750 800 850 900 950 1000 1050 1100
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
1.0
0.9
0.8
0.7
94 8248
0.6 0.4 0.2
0
40°
50°
60°
70°
80°
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
100
90
80
70 RL = 100 Ω
60
50
40
30
tr
20
tf
10
0
0 250 500 750 1000 1250 1500 1750 2000
20599
IC - Collector Current (µA)
Fig. 4 - Rise/Fall Time vs. Collector Current
2.0
1.8
VCE = 5 V
1.6 Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40
60 80
Tamb - Ambient Temperature (°C)
100
Fig. 7 - Relative Collector Current vs. Ambient Temperature
Document Number: 81595
Rev. 1.2, 21-Feb-11
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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