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VEMT2000X01 Dataheets PDF



Part Number VEMT2000X01
Manufacturers Vishay
Logo Vishay
Description Silicon NPN Phototransistor
Datasheet VEMT2000X01 DatasheetVEMT2000X01 Datasheet (PDF)

www.DataSheet.co.kr VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times 21568 VEMT2020X01 VEMT2000X01 • Angle of half sensitivity:  = ± 15° • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2.

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www.DataSheet.co.kr VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times 21568 VEMT2020X01 VEMT2000X01 • Angle of half sensitivity:  = ± 15° • Package matched with IR emitter series VSMB2000X01 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition DESCRIPTION VEMT2000X01 series are silicon NPN epitaxial planar phototransistors with daylight blocking filter in a miniature, black dome lens package for surface mounting. Filter bandwidth is matched with 830 nm to 950 nm IR emitters. APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT VEMT2000X01 VEMT2020X01 Note • Test condition see table “Basic Characteristics” Ica (mA) 6 6  (deg) ± 15 ± 15 0.5 (nm) 790 to 970 790 to 970 ORDERING INFORMATION ORDERING CODE VEMT2000X01 VEMT2020X01 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter voltage Emitter collector voltage Collector current Power power dissipation Junction temperature Operating temperature range Tamb  75 °C TEST CONDITION SYMBOL VCEO VECO IC PV Tj Tamb VALUE 20 7 50 100 100 - 40 to + 100 UNIT V V mA mW °C °C Document Number: 81595 Rev. 1.2, 21-Feb-11 For technical questions, contact: [email protected] www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr VEMT2000X01, VEMT2020X01 Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow profile fig. 8 Acc. J-STD-051 TEST CONDITION SYMBOL Tstg Tsd RthJA VALUE - 40 to + 100 260 250 UNIT °C °C K/W 120 PV - Power Dissipation (mW) 100 80 60 RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21619 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica IC = 0.05 mA Ee = 1 mW/cm2,  = 950 nm, VCE = 5 V TEST CONDITION IC = 0.1 mA VCE = 5 V, E = 0 VCE = 0.


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