DatasheetsPDF.com

NPN Phototransisto. VEMT4700 Datasheet

DatasheetsPDF.com

NPN Phototransisto. VEMT4700 Datasheet






VEMT4700 Phototransisto. Datasheet pdf. Equivalent




VEMT4700 Phototransisto. Datasheet pdf. Equivalent





Part

VEMT4700

Description

Silicon NPN Phototransisto



Feature


www.DataSheet.co.kr VEMT4700 Vishay Sem iconductors Silicon NPN Phototransisto r, RoHS Compliant FEATURES • Package type: surface mount • Package form: P LCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High photo sensit ivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 94 85 54 • Angle of half sensitivity:.
Manufacture

Vishay

Datasheet
Download VEMT4700 Datasheet


Vishay VEMT4700

VEMT4700; ϕ = ± 60° • Base terminal connecte d • Package notch indicates collector • Package matched with IR emitter se ries VSML3710 DESCRIPTION VEMT4700 is a high speed silicon NPN epitaxial plan ar phototransistor in a miniature PLCC- 3 package for surface mounting on print ed boards. The device is sensitive to v isible and near infrared radiation. Floor life: 4 weeks, MSL 2a.


Vishay VEMT4700

, acc. J-STD-020 • Lead (Pb)-free refl ow soldering • Lead (Pb)-free compone nt in accordance RoHS 2002/95/EC and WE EE 2002/96/EC with APPLICATIONS • Ph oto interrupters • Miniature switches • Counters • Encoders • Position sensors • Light sensors PRODUCT SUM MARY COMPONENT VEMT4700 Note Test condi tions see table “Basic Characteristic s” Ica (mA) 0.5 ϕ (deg) ± 60 λ0.1 (n.


Vishay VEMT4700

m) 450 to 1080 ORDERING INFORMATION ORD ERING CODE VEMT4700-GS08 VEMT4700-GS18 Note MOQ: minimum order quantity PACKAG ING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-3 PLCC-3 ABSOLUTE MAXIMUM RATINGS PARAM ETER Collector emitter voltage Emitter collector voltage Collector current Col lector peak curren.

Part

VEMT4700

Description

Silicon NPN Phototransisto



Feature


www.DataSheet.co.kr VEMT4700 Vishay Sem iconductors Silicon NPN Phototransisto r, RoHS Compliant FEATURES • Package type: surface mount • Package form: P LCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High photo sensit ivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 94 85 54 • Angle of half sensitivity:.
Manufacture

Vishay

Datasheet
Download VEMT4700 Datasheet




 VEMT4700
www.DataSheet.co.kr
VEMT4700
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
94 8554
DESCRIPTION
VEMT4700 is a high speed silicon NPN epitaxial planar
phototransistor in a miniature PLCC-3 package for surface
mounting on printed boards. The device is sensitive to visible
and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: PLCC-3
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
• Base terminal connected
• Package notch indicates collector
• Package matched with IR emitter series VSML3710
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors
• Light sensors
PRODUCT SUMMARY
COMPONENT
VEMT4700
Ica (mA)
0.5
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VEMT4700-GS08
VEMT4700-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ϕ (deg)
± 60
λ0.1 (nm)
450 to 1080
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-3
PLCC-3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
TEST CONDITION
tp/T 0.1, tp 10 µs
SYMBOL
VCEO
VECO
IC
ICM
PV
VALUE
70
5
50
100
100
UNIT
V
V
mA
mA
mW
Document Number: 81501
Rev. 1.3, 04-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
531
Datasheet pdf - http://www.DataSheet4U.net/




 VEMT4700
www.DataSheet.co.kr
VEMT4700
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Acc. reflow solder profile fig. 10
Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 100
- 40 to + 100
260
400
UNIT
°C
°C
°C
°C
K/W
125
100
R thJA = 400 K/W
75
50
25
0
0
20376
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter breakdown voltage
IC = 1 mA
Collector emitter dark current
VCE = 20 V, E = 0
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
Collector light current
Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V
Angle of half sensitivity
V(BR)CEO
ICEO
CCEO
Ica
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Rise time, fall time
Cut-off frequency
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 1 kΩ
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 100 Ω
VS = 5 V, IC = 2 mA, RL = 100 Ω
λp
λ0.1
VCEsat
tr/tf
tr/tf
fc
Note
Tamb = 25 °C, unless otherwise specified
MIN.
70
0.25
TYP.
MAX.
1
3
0.5
± 60
850
450 to 1080
0.15
6
2
180
200
0.3
UNIT
V
nA
pF
mA
deg
nm
nm
V
µs
µs
kHz
www.vishay.com
532
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81501
Rev. 1.3, 04-Sep-08
Datasheet pdf - http://www.DataSheet4U.net/




 VEMT4700
www.DataSheet.co.kr
VEMT4700
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
104
103
VCE = 20 V
102
101
10
20 40 60 80 100
94 8304
T - Ambient Temperature (°C)
amb
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
V =5V
CE
1.6 E = 1 mW/cm2
e
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
20 40
60 80 100
94 8239
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
10
1
0.1
0.01
VCE = 5 V
λ = 950 nm
0.001
0.01
94 8316
0.1 1
Ee - Irradiance (mW/cm²)
10
Fig. 4 - Collector Light Current vs. Irradiance
10
λ = 950 nm
1 Ee = 1 mW/cm²
0.5 mW/cm²
0.2 mW/cm²
0.1
0.1
1
10 100
94 8317
VCE - Collector Emitter Voltage (V)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
10
f = 1 MHz
8
6
4
2
0
0.1 1 10 100
94 8294
V - Collector Emitter Voltage (V)
CE
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
8
VCE = 5 V
6 RL = 100 Ω
λ = 950 nm
4
toff
2
ton
0
0 2 4 6 8 10 12 14
94 8293
IC - Collector Current (mA)
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Document Number: 81501
Rev. 1.3, 04-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
533
Datasheet pdf - http://www.DataSheet4U.net/






Recommended third-party VEMT4700 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)