2SC2899

2SC2899 Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings 500 400 10 0.5 1.0 0.75 10 150 –55 to +150 Unit V V V A A W W °C °C 2SC2899 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.1 A, RBE = ∞, L = 100 mH I C = 0.5 A, IB1 = –IB2 = 0.1 A, VBE = –5 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IC = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 V V µs µs µs I C = 0.5 A, IB1 = –IB2 = 0.1 A, VCC ≅ 150 V I C = 0.25 A, IB = 0.05 A*1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 10 — — 15 7 — — — — — — — — — — — — — — — — 20 50 — — 1.0 1.5 1.0 2.0 1.0 V µA µA DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 Area of Safe Operation 50 µs Collector Curren...