DatasheetsPDF.com

ESD-Protection Diode. VESD03A1C-02Z Datasheet

DatasheetsPDF.com

ESD-Protection Diode. VESD03A1C-02Z Datasheet






VESD03A1C-02Z Diode. Datasheet pdf. Equivalent




VESD03A1C-02Z Diode. Datasheet pdf. Equivalent





Part

VESD03A1C-02Z

Description

ESD-Protection Diode

Manufacture

Vishay

Datasheet
Download VESD03A1C-02Z Datasheet


Vishay VESD03A1C-02Z

VESD03A1C-02Z; www.DataSheet.co.kr VESD03A1C-02Z Visha y Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD -protection device • ESD-immunity acc . IEC 61000-4-2 > 30 kV contact dischar ge > 30 kV air discharge • Tiny SOD92 3 package • Package height = 0.4 mm Typ. capacitance 46 pF (VR = 2.5 V; f = 1 MHz) • Leakage current < 0.5 µ A (VR = 3.3 V) • Lead (Pb)-free.


Vishay VESD03A1C-02Z

component • Component in accordance t o RoHS 2002/95/EC and WEEE 2002/96/EC 1 2 20278 20516 2 Marking (example o nly) XY Ordering Information Device na me VESD03A1C-02Z 20279 Bar = Cathode marking X = Date code Y = Type code (se e table below) Ordering code VESD03A1C -02Z-GS08 Taped units per reel (8 mm t ape on 7" reel) 8000 Minimum order qua ntity 8000 Package .


Vishay VESD03A1C-02Z

Data Device name VESD03A1C-02Z Package n ame SOD923 Type code C Weight 0.45 mg M olding compound flammability rating UL 94 V-0 Moisture sensitivity level Solde ring conditions MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Absolute Maximum Ratings Rating Peak pu lse current Peak pulse power ESD immuni ty Operating temperature Storage temper ature Test conditio.



Part

VESD03A1C-02Z

Description

ESD-Protection Diode

Manufacture

Vishay

Datasheet
Download VESD03A1C-02Z Datasheet




 VESD03A1C-02Z
www.DataSheet.co.kr
ESD-Protection Diode in SOD923
VESD03A1C-02Z
Vishay Semiconductors
Features
• Single-line ESD-protection device
• ESD-immunity acc. IEC 61000-4-2
> 30 kV contact discharge
> 30 kV air discharge
• Tiny SOD923 package
• Package height = 0.4 mm
• Typ. capacitance 46 pF
(VR = 2.5 V; f = 1 MHz)
• Leakage current < 0.5 µA (VR = 3.3 V)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20516
2
12
20278
Marking (example only)
XY
20279
Ordering Information
Device name
VESD03A1C-02Z
Ordering code
VESD03A1C-02Z-GS08
Bar = Cathode marking
X = Date code
Y = Type code (see table below)
Taped units per reel
(8 mm tape on 7" reel)
8000
Minimum order quantity
8000
Package Data
Device name
VESD03A1C-02Z
Package
name
SOD923
Type
code
C
Weight
Molding compound
flammability rating
Moisture sensitivity level
Soldering conditions
0.45 mg
UL 94 V-0
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Absolute Maximum Ratings
Rating
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Test condition
acc. IEC 61000-4-5, tP = 8/20 µs/single shot
acc. IEC 61000-4-5, tP = 8/20 µs/single shot
contact discharge acc. IEC 61000-4-2; 10 pulses
air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
IPPM
PPP
VESD
VESD
TJ
TSTG
Value
9.5
95
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
W
kV
kV
°C
°C
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 81690
Rev. 1.3, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VESD03A1C-02Z
www.DataSheet.co.kr
VESD03A1C-02Z
Vishay Semiconductors
BiAs-Mode (Bidirectional Asymmetrical protection mode)
With the VESD03A1C-02Z one signal- or data-lines (L1) can be protected against voltage transients. With
pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as
the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground
line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD03A1C-02Z clamping behaviour
is Bidirectional and Asymmetrical (BiAs).
L1
20280
Electrical Characteristics
Ratings at 25 °C, ambient temperature, unless otherwise specified
VESD03A1C-02Z
BiAs mode (between pin 1 and pin 2)
Parameter
Test conditions/remarks
Symbol
Min.
Typ.
Max.
Unit
Protection paths
number of lines which can be protected
Nlines
1 lines
Reverse stand off voltage
at IR = 0.5 µA
VRWM
3.3
V
Reverse current
at VR = 3.3 V
IR
0.06 1
µA
Reverse break down voltage
at IR = 1 mA
VBR
5
6 6.6 V
Reverse clamping voltage
at IPP = 1 A
at IPP = IPPM = 9.5 A
VC
VC
6.4 7.5
8.5 10
V
V
at IPP = 0.2 A
VF
0.9 1.2
V
Forward clamping voltage
at IPP = 1 A
VF 1.1
V
at IPP = IPPM = 9.5 A
VF
2.5
V
Capacitance
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
CD
CD
78 85 pF
46 pF
www.vishay.com
2
For technical support, please contact: ESD-Protection@vishay.com
Document Number 81690
Rev. 1.3, 22-Sep-08
Datasheet pdf - http://www.DataSheet4U.net/





 VESD03A1C-02Z
www.DataSheet.co.kr
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
120 %
100 %
Rise time = 0.7 ns to 1 ns
80 %
60 %
53 %
40 %
27 %
20 %
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
100 %
8 µs to 100 %
80 %
60 %
40 %
20 µs to 50 %
20 %
0%
0
20548
10 20 30
Time (µs)
40
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
90
f = 1 MHz
80
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5
20969
VR (V)
Figure 3. Typical Capacitance CD vs.
Reverse Voltage VR
VESD03A1C-02Z
Vishay Semiconductors
100
10
1
0.1
0.01
0.001
0.5 0.6 0.7 0.8 0.9
20697
VF (V)
Figure 4. Typical Forward Current IF vs.
Forward Voltage VF
7
6
5
4
3
2
1
0
0.01 0.1
1
10 100 1000 10000
20698
IR (µA)
Figure 5. Typical Reverse Voltage VR vs.
Reverse Current IR
10
8 positive surge
6
4 Measured
acc. IEC 61000-4-5
2 (8/20 µs - wave form)
VC
0
-2
negative surge
-4
0 1 2 3 4 5 6 7 8 9 10 11
20699
IPP (A)
Figure 6. Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Document Number 81690
Rev. 1.3, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



Recommended third-party VESD03A1C-02Z Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)