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Diode Array. VESD05A4A-HS4 Datasheet

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Diode Array. VESD05A4A-HS4 Datasheet






VESD05A4A-HS4 Array. Datasheet pdf. Equivalent




VESD05A4A-HS4 Array. Datasheet pdf. Equivalent





Part

VESD05A4A-HS4

Description

4-Line (Quad) ESD Protection Diode Array



Feature


www.DataSheet.co.kr VESD05A4A-HS4 Visha y Semiconductors 4-Line (Quad) ESD Pro tection Diode Array in LLP1010-6L Feat ures • • • • • • Ultra comp act LLP1010-6L package Low package heig ht < 0.4 mm 4-line ESD protection (quad ) Low leakage current < 0.1 µA Low loa d capacitance CD = 12 pF ESD-protection acc. IEC 61000-4-2 ± 15 kV contact di scharge ± 17 kV air discharge Su.
Manufacture

Vishay

Datasheet
Download VESD05A4A-HS4 Datasheet


Vishay VESD05A4A-HS4

VESD05A4A-HS4; rge current acc. IEC 6100-4-5 IPP > 2.5 A Soldering can be checked by standard vision inspection. No X-ray necessary P in plating NiPdAu (e4) no whisker growt h Compliant to RoHS directive 2002/95/E C and in accordance to WEEE 2002/96/EC 5 6 4 1 20896 2 3 20897 • • • Marking (example only) XY 2093 2 Dot = Pin 1 marking X = Date code Y = Type code (see table bel.


Vishay VESD05A4A-HS4

ow) Ordering Information Device name VE SD05A4A-HS4 Ordering code VESD05A4A-HS4 -GS08 Taped units per reel (8 mm tape o n 7" reel) 5000 Minimum order quantity 5000 Package Data Device name Package name Type code A Weight Molding compoun d flammability rating UL 94 V-0 Moistur e sensitivity level MSL level 1 (accord ing J-STD-020) Soldering conditions VE SD05A4A-HS4 LLP101.


Vishay VESD05A4A-HS4

0-6L 1.07 mg 260 °C/10 s at terminals ** Please see document “Vishay Mate rial Category Policy”: www.vishay.com /doc?99902 Document Number 81786 Rev. 1 .4, 02-Mar-10 For technical support, pl ease contact: ESDprotection@vishay.com www.vishay.com 1 Datasheet pdf - http:/ /www.DataSheet4U.net/ www.DataSheet.co .kr VESD05A4A-HS4 Vishay Semiconductor s Absolute Maximum Rati.

Part

VESD05A4A-HS4

Description

4-Line (Quad) ESD Protection Diode Array



Feature


www.DataSheet.co.kr VESD05A4A-HS4 Visha y Semiconductors 4-Line (Quad) ESD Pro tection Diode Array in LLP1010-6L Feat ures • • • • • • Ultra comp act LLP1010-6L package Low package heig ht < 0.4 mm 4-line ESD protection (quad ) Low leakage current < 0.1 µA Low loa d capacitance CD = 12 pF ESD-protection acc. IEC 61000-4-2 ± 15 kV contact di scharge ± 17 kV air discharge Su.
Manufacture

Vishay

Datasheet
Download VESD05A4A-HS4 Datasheet




 VESD05A4A-HS4
www.DataSheet.co.kr
VESD05A4A-HS4
Vishay Semiconductors
4-Line (Quad) ESD Protection Diode Array in LLP1010-6L
Features
• Ultra compact LLP1010-6L package
• Low package height < 0.4 mm
• 4-line ESD protection (quad)
• Low leakage current < 0.1 µA
• Low load capacitance CD = 12 pF
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 17 kV air discharge
• Surge current acc. IEC 6100-4-5 IPP > 2.5 A
• Soldering can be checked by standard vision
inspection. No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20896
54
6
123
20897
Marking (example only)
XY
20932
Dot = Pin 1 marking
X = Date code
Y = Type code (see table below)
Ordering Information
Device name
VESD05A4A-HS4
Ordering code
VESD05A4A-HS4-GS08
Taped units per reel
(8 mm tape on 7" reel)
5000
Minimum order quantity
5000
Package Data
Device name
Package
name
Type
code
Molding
Weight
compound
flammability rating
VESD05A4A-HS4 LLP1010-6L A 1.07 mg
UL 94 V-0
Moisture sensitivity level
MSL level 1
(according J-STD-020)
Soldering conditions
260 °C/10 s at terminals
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number 81786
Rev. 1.4, 02-Mar-10
For technical support, please contact: ESDprotection@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VESD05A4A-HS4
www.DataSheet.co.kr
VESD05A4A-HS4
Vishay Semiconductors
Absolute Maximum Ratings
Rating
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Test conditions
Symbol Value
BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6);
acc. IEC 61000-4-5; tp = 8/20 µs; single shot
BiSy-mode: each input (pin 1, 3 to 5) to any other input pin.
Pin 2 and 6 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot
BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6);
acc. IEC 61000-4-5; tp = 8/20 µs; single shot
BiSy-mode: each input (pin 1, 3 to 5) to any other input pin.
Pin 2 and 6 not connected. Acc. IEC 61000-4-5; tp = 8/20 µs; single shot
Acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1, 3 to 5) to ground (pin 2 and 6)
Contact
discharge
Air
discharge
Acc. IEC 61000-4-2 ; 10 pulses
BiSy-mode: each input (pin 1, 3 to 5) to any other input pin.
Pin 2 and 6 not connected.
Contact
discharge
Air
discharge
Junction temperature
IPPM
IPPM
PPP
PPP
VESD
VESD
VESD
VESD
TJ
TSTG
2.5
2.5
30
33
± 15
± 17
± 15
± 17
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
kV
kV
°C
°C
BiAs-Mode (4-line Bidirectional Asymmetrical protection mode)
With the VESD05A4A-HS4 up to 4 signal- or data-lines (L1 to L4) can be protected against voltage transients.
With pin 2 and 6 connected to ground and pin 1, 3, 4 and 5 connected to a signal- or data-line which has to be
protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offer a high
isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A4A-HS4 clamping behaviour
is Bidirectional and Asymmetrical (BiAs).
L4
54
6
L3
123
L1
L2
20898
www.vishay.com
2
For technical support, please contact: ESDprotection@vishay.com
Document Number 81786
Rev. 1.4, 02-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/




 VESD05A4A-HS4
www.DataSheet.co.kr
VESD05A4A-HS4
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VESD05A4A-HS4
BiAs mode: each input (pin 1, 3, 4 and 5) to ground (pin 2 and/or 6)
Parameter
Test conditions/remarks
Symbol
Protection paths
Number of line which can be protected
Nlines
Reverse stand-off voltage
at IR = 0.1 µA
VRWM
Reverse current
at VR = VRWM = 5 V
IR
Reverse breakdown voltage
at IR = 1 mA
VBR
Clamping voltage
at IPP = 2.5 A acc. IEC 61000-4-5
VC
Forward clamping voltage
at IF = 2.5 A acc. IEC 61000-4-5
VF
Capacitance
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
CD
CD
Min.
5
6
Typ. Max.
4
< 0.01
12
7.5
0.1
8
12
2.5
15
8.5
Unit
lines
V
µA
V
V
V
pF
pF
If a higher surge current or peak pulse current (IPP) is needed, some protection diodes in the
VESD05A4A-HS4 can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get
double surge power = double peak pulse current (2 x IPPM)
half of the line inductance = reduced clamping voltage
half of the line resistance = reduced clamping voltage
double line Capacitance (2 x CD)
double Reverse leakage current (2 x IR)
54
6
L1 L2
123
20900
Document Number 81786
Rev. 1.4, 02-Mar-10
For technical support, please contact: ESDprotection@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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