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Schottky Rectifier. VF10150C Datasheet

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Schottky Rectifier. VF10150C Datasheet






VF10150C Rectifier. Datasheet pdf. Equivalent




VF10150C Rectifier. Datasheet pdf. Equivalent





Part

VF10150C

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com VF10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra L ow VF = 0.63 V at IF = 3 A TMBS ® ITO -220AB 123 VF10150C PIN 1 PIN 2 PI N 3 FEATURES • Trench MOS Schottky t echnology • Low forward voltage drop, low power losses • High efficiency o peration • Solder bath temperature 27 5 °C max. 10 s, per JESD 22.
Manufacture

Vishay

Datasheet
Download VF10150C Datasheet


Vishay VF10150C

VF10150C; -B106 • Material categorization: for d efinitions of compliance please see www .vishay.com/doc?99912 TYPICAL APPLICATI ONS For use in high frequency DC/DC con verters, switching power supplies, free wheeling diodes, OR-ing diode, and reve rse battery protection. PRIMARY CHARAC TERISTICS IF(AV) VRRM IFSM 2 x 5.0 A 150 V 60 A VF at IF = 5.0 A 0.69 V T J max. Package 150 .


Vishay VF10150C

°C ITO-220AB Diode variation Dual com mon cathode MECHANICAL DATA Case: ITO- 220AB Molding compound meets UL 94 V -0 flammability rating Base P/N-M3 - ha logen-free, RoHS-compliant, and commerc ial grade Terminals: Matte tin plated l eads, soldera .


Vishay VF10150C

.

Part

VF10150C

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com VF10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra L ow VF = 0.63 V at IF = 3 A TMBS ® ITO -220AB 123 VF10150C PIN 1 PIN 2 PI N 3 FEATURES • Trench MOS Schottky t echnology • Low forward voltage drop, low power losses • High efficiency o peration • Solder bath temperature 27 5 °C max. 10 s, per JESD 22.
Manufacture

Vishay

Datasheet
Download VF10150C Datasheet




 VF10150C
www.vishay.com
VF10150C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.63 V at IF = 3 A
TMBS ®
ITO-220AB
123
VF10150C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 5.0 A
150 V
60 A
VF at IF = 5.0 A
0.69 V
TJ max.
Package
150 °C
ITO-220AB
Diode variation
Dual common cathode
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rating of change (rated VR)
Isolation voltage from thermal to heatsink t = 1 min
Operating junction and storage temperature range
IFSM
dV/dt
VAC
TJ, TSTG
VF10150C
150
10
5.0
60
10 000
1500
-55 to +150
UNIT
V
A
A
V/μs
V
°C
Revision: 17-Aug-15
1 Document Number: 89327
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VF10150C
www.vishay.com
VF10150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 3 A
IF = 5 A
IF = 3 A
IF = 5 A
Reverse current per diode
VR = 100 V
VR = 150 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.82
0.99
0.63
0.69
0.5
0.5
-
1.0
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
VF10150C
6.5
MAX.
-
1.41
-
0.75
-
-
100
10
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VF10150C-M3/4W
1.74
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
5
D = 0.8
D = 0.5
4 D = 0.3
D = 0.2
3
D = 0.1
2
D = 1.0
T
1
D = tp/T
tp
0
0123456
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 17-Aug-15
2 Document Number: 89327
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VF10150C
www.vishay.com
VF10150C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
10
Junction to Case
0.001
0.0001
TA = 25 °C
0.00001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Revision: 17-Aug-15
3 Document Number: 89327
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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