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Schottky Rectifier. VF10150S Datasheet

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Schottky Rectifier. VF10150S Datasheet






VF10150S Rectifier. Datasheet pdf. Equivalent




VF10150S Rectifier. Datasheet pdf. Equivalent





Part

VF10150S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VF1015 0S Vishay General Semiconductor High-V oltage Trench MOS Barrier Schottky Rect ifier Ultra Low VF = 0.59 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forwar d voltage drop, low power losses • Hi gh efficiency operation • Solder bath temperature 275 °C max. 10 s, per JES D 22-B106 3 • Compliant to .
Manufacture

Vishay

Datasheet
Download VF10150S Datasheet


Vishay VF10150S

VF10150S; RoHS directive 2002/95/EC and in accorda nce to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VF10150S PIN 1 PIN 2 2 TYPICAL AP PLICATIONS For use in high frequency DC /DC converters, switching power supplie s, freewheeling diodes, OR-ing diode, a nd reverse battery protection. PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFS M VF at IF = 10 A TJ.


Vishay VF10150S

max. 10 A 150 V 120 A 0.69 V 150 °C M ECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability r ating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Termina ls: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix me ets JESD 201 class 1A whisker test Pola rity: As marked Mounting Torque: 10 in- lbs maximum per MA.


Vishay VF10150S

XIMUM RATINGS (TA = 25 °C unless otherw ise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average f orward rectified current (fig. 1) Peak forward surge current 8.3 ms single hal f sine-wave superimposed on rated load Voltage rate of change (rated VR) Isola tion voltage from termal to heatsink t = 1 min Operating junction and storage temperature range S.

Part

VF10150S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VF1015 0S Vishay General Semiconductor High-V oltage Trench MOS Barrier Schottky Rect ifier Ultra Low VF = 0.59 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forwar d voltage drop, low power losses • Hi gh efficiency operation • Solder bath temperature 275 °C max. 10 s, per JES D 22-B106 3 • Compliant to .
Manufacture

Vishay

Datasheet
Download VF10150S Datasheet




 VF10150S
www.DataSheet.co.kr
New Product
VF10150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TMBS ®
ITO-220AB
123
VF10150S
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
150 V
IFSM
120 A
VF at IF = 10 A
0.69 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VF10150S
150
10
120
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89267 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VF10150S
www.DataSheet.co.kr
New Product
VF10150S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current
VR = 100 V
VR = 150 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.79
1.05
0.59
0.69
1.3
1.2
-
3
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RθJC
VF10150S
4.0
MAX.
-
1.20
-
0.75
-
-
150
15
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VF10150S-M3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8 D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89267
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/




 VF10150S
www.DataSheet.co.kr
New Product
VF10150S
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
123
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89267 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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