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Schottky Rectifier. VI20100S Datasheet

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Schottky Rectifier. VI20100S Datasheet






VI20100S Rectifier. Datasheet pdf. Equivalent




VI20100S Rectifier. Datasheet pdf. Equivalent





Part

VI20100S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.446 V at IF = 5 A TO-220 AB TMBS® TO-262AA K V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI20100S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power los ses • High efficiency o.
Manufacture

Vishay

Datasheet
Download VI20100S Datasheet


Vishay VI20100S

VI20100S; peration • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Mate rial categorization: For definitions of compliance please see www.vishay.com/d oc?99912 TYPICAL APPLICATIONS For use i n high frequency DC/DC converters, swit ching power supplies, freewheeling diod es, OR-ing diode, and reverse battery p rotection. PRIMARY CHARACT.


Vishay VI20100S

ERISTICS IF(AV) 20 A VRRM 100 V IFS M VF at IF = 20 A 250 A 0.69 V TJ max . 150 °C Package TO-220AB, TO-262AA Diode variation Single die MECHANIC AL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flamma bility rating Base P/N-M3 - halogen-fre e, RoHS-compliant, and commercial grade  Base P/NHM3 - halogen-free, RoHS-co mpliant, and AEC-Q101 q.


Vishay VI20100S

ualified Terminals: Matte tin plated lea ds, solderable per J-STD-002 and JESD 2 2-B102 M3 suffix meets JESD 201 clas s 1A whisker test, HM3 suffix meets JES D 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maxi mum MAXIMUM RATINGS (TA = 25 °C unles s otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forw.

Part

VI20100S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com V20100S, VI20100S Vishay General Semiconductor High-Voltage Tr ench MOS Barrier Schottky Rectifier Ult ra Low VF = 0.446 V at IF = 5 A TO-220 AB TMBS® TO-262AA K V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI20100S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power los ses • High efficiency o.
Manufacture

Vishay

Datasheet
Download VI20100S Datasheet




 VI20100S
www.vishay.com
V20100S, VI20100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.446 V at IF = 5 A
TO-220AB
TMBS®
TO-262AA
K
V20100S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VI20100S
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
100 V
IFSM
VF at IF = 20 A
250 A
0.69 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Single die
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V20100S
VI20100S
100
20
250
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 26-Mar-14
1 Document Number: 89190
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI20100S
www.vishay.com
V20100S, VI20100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
IF = 5 A
0.51
IF = 10 A TA = 25 °C
0.60
Maximum instantaneous forward voltage
IF = 20 A
IF = 5 A
IF = 10 A
TA = 125 °C
VF (1)
0.79
0.45
0.53
IF = 20 A
0.69
Reverse current
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
17
7
70
14
MAX.
-
-
0.90
-
-
0.76
-
-
500
30
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V20100S
Typical thermal resistance
RJC
2.0
VI20100S
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100S-M3/4W
1.88
TO-262AA
V120100S-M3/4W
1.45
TO-220AB
V20100SHM3/4W (1)
1.88
TO-262AA
V120100SHM3/4W (1)
1.45
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
Revision: 26-Mar-14
2 Document Number: 89190
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VI20100S
www.vishay.com
V20100S, VI20100S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
V20100S
VI20100S
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
4 8 12 16 20
Average Forward Current (A)
24
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
TA = 125 °C
10
1 TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(I)20100S
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
Revision: 26-Mar-14
3 Document Number: 89190
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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